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Title: ELECTRON IRRADIATION OF NPN BIPOLAR TRANSISTORS WITH SILICON NITRIDE PASSIVATION.

Journal Article · · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 6, 168-75(Dec. 1968).

Research Organization:
Massachusetts Inst. of Tech., Lexington
Sponsoring Organization:
USDOE
NSA Number:
NSA-23-017889
OSTI ID:
4811211
Journal Information:
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 6, 168-75(Dec. 1968)., Other Information: From Annual Conference on Nuclear and Space Radiation Effects, Missoula, Mont. See CONF-680706. Orig. Receipt Date: 31-DEC-69
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

N26500* -Instrumentation-Radiation Effects on Instruments & Instrument Components
CORROSION PROTECTION
ELECTRONS
KEV RANGE
MEV RANGE
PASSIVATION
PERFORMANCE
RADIATION EFFECTS
SILICON NITRIDES
TRANSISTORS
ELECTRONS/effects on silicon nitride-passivated bipolar transistors at 20 keV and 1.5 MeV
TRANSISTORS/radiation effects on silicon nitride-passivated n-p-n bipolar
electron