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Title: Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy

Abstract

We report the first concrete evidence that oxygen causes nonradiative deep levels in (Al{sub x}Ga{sub 1-x}){sub 0.5}In{sub 0.5}P grown by metalorganic vapor phase epitaxy. We doped AlGaInP with O{sub 2} and investigated the oxygen and deep level concentrations by secondary ion mass spectroscopy and isothermal capacitance transient spectroscopy. We confirmed that oxygen causes the D3 (thermal activation energy: E{sub T} {congruent} 1.0 eV for x = 0.7, nonradiative recombination center) and D2 (E{sub T}{congruent}0.46eV) levels, which we previously found in undoped AlGaInP. We demonstrate that the oxygen and nonradiative deep level concentrations are significantly reduced at higher growth temperatures, higher PH, partial pressures, and substrate offset from (100) toward [011]. 23 refs., 5 figs.

Authors:
; ;  [1]
  1. Fujitsu Labs. Ltd., Atsugi (Japan) [and others
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
478448
Resource Type:
Journal Article
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 23; Journal Issue: 3; Other Information: PBD: Mar 1994
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; 36 MATERIALS SCIENCE; INDIUM PHOSPHIDES; VAPOR PHASE EPITAXY; ALUMINIUM COMPOUNDS; GALLIUM COMPOUNDS; MASS SPECTROSCOPY; IMPURITIES; RECOMBINATION

Citation Formats

Kondo, Makoto, Ikada, Naoko, and Domen, Kay. Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy. United States: N. p., 1994. Web. doi:10.1007/BF03296064.
Kondo, Makoto, Ikada, Naoko, & Domen, Kay. Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy. United States. doi:10.1007/BF03296064.
Kondo, Makoto, Ikada, Naoko, and Domen, Kay. Tue . "Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy". United States. doi:10.1007/BF03296064.
@article{osti_478448,
title = {Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy},
author = {Kondo, Makoto and Ikada, Naoko and Domen, Kay},
abstractNote = {We report the first concrete evidence that oxygen causes nonradiative deep levels in (Al{sub x}Ga{sub 1-x}){sub 0.5}In{sub 0.5}P grown by metalorganic vapor phase epitaxy. We doped AlGaInP with O{sub 2} and investigated the oxygen and deep level concentrations by secondary ion mass spectroscopy and isothermal capacitance transient spectroscopy. We confirmed that oxygen causes the D3 (thermal activation energy: E{sub T} {congruent} 1.0 eV for x = 0.7, nonradiative recombination center) and D2 (E{sub T}{congruent}0.46eV) levels, which we previously found in undoped AlGaInP. We demonstrate that the oxygen and nonradiative deep level concentrations are significantly reduced at higher growth temperatures, higher PH, partial pressures, and substrate offset from (100) toward [011]. 23 refs., 5 figs.},
doi = {10.1007/BF03296064},
journal = {Journal of Electronic Materials},
number = 3,
volume = 23,
place = {United States},
year = {1994},
month = {3}
}