Carbon nitride formation by plasma assisted ion beam deposition
- Structured Materials Industries, Inc., Piscataway, NJ (United States)
- Stevens Inst. of Tech., Hoboken, NJ (United States)
Theoretical works have indicated that carbon nitride, in a {beta}-C{sub 3}N{sub 4} phase, would have optical and mechanical properties comparable to or exceeding those of diamond. In this effort, the formation of carbon nitride thin films was investigated using a Plasma Assisted Ion Beam Deposition (PAIBD). In this technique, a C{sup {minus}} ion beam combined with a N{sub 2} or NH{sub 3} RF plasma source is used to synthesize carbon nitride films. These films were investigated as a function of both C{sup {minus}} ion beam energy and the power of the plasma source. The C{sup {minus}} ion energy was found to be a key parameter in the formation of carbon nitride. The films were evaluated by a variety of diagnostic techniques including Raman, AES, XRD and FTIR. Analysis confirms high nitrogen concentration in the synthesized films and the major portion of carbon being single bonds in the sp{sup 3} bond configuration, which is a characteristic of the tetrahedral {beta}-C{sub 3}N{sub 4} phase. Tribology tests confirmed that the friction coefficient and the wear rate are comparable to diamond. The results show that the higher C{sup {minus}} ion beam energy ({approximately} 150 eV) forms insulating films with the highest single bond percentages in the range studied. The authors believed beam energy control is critical to the types of bonds formed.
- OSTI ID:
- 477420
- Report Number(s):
- CONF-951155-; ISBN 1-55899-299-5; TRN: IM9724%%297
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Ion-solid interactions for materials modification and processing; Poker, D.B. [ed.] [Oak Ridge National Lab., TN (United States)]; Ila, D. [ed.] [Alabama A and M Univ., Normal, AL (United States)]; Cheng, Y.T. [ed.] [General Motors Corp., Warren, MI (United States)]; Harriott, L.R. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Sigmon, T.W. [ed.] [Arizona State Univ., Tempe, AZ (United States)]; PB: 923 p.; Materials Research Society symposium proceedings, Volume 396
- Country of Publication:
- United States
- Language:
- English
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