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Title: Carbon nitride (CN{sub x}) films formed by ion implantation into thin carbon films

Abstract

Carbon nitride (CN{sub x}) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C 1s and N 1s spectra of all CN{sub x} films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV, and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CN{sub x}) becomes more amorphous as the two broad peaks at 1,577 cm{sup {minus}1} (G line) and 1,350 cm{sup {minus}1} (D line) observed in the a-C films disappear and a broad asymmetric peak around 1,500 cm{sup {minus}1} is formed. The interfacial tension between the a-C films and the substrate, obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.

Authors:
; ;  [1]; ;  [2];  [3]
  1. Northeastern Univ., Boston, MA (United States)
  2. Univ. of Toronto, Ontario (Canada)
  3. Lawrence Berkeley Lab., CA (United States)
Publication Date:
OSTI Identifier:
477398
Report Number(s):
CONF-951155-
ISBN 1-55899-299-5; TRN: IM9724%%275
Resource Type:
Book
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Ion-solid interactions for materials modification and processing; Poker, D.B. [ed.] [Oak Ridge National Lab., TN (United States)]; Ila, D. [ed.] [Alabama A and M Univ., Normal, AL (United States)]; Cheng, Y.T. [ed.] [General Motors Corp., Warren, MI (United States)]; Harriott, L.R. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Sigmon, T.W. [ed.] [Arizona State Univ., Tempe, AZ (United States)]; PB: 923 p.; Materials Research Society symposium proceedings, Volume 396
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON NITRIDES; SYNTHESIS; ION IMPLANTATION; NITROGEN IONS; CHEMICAL BONDS; EXPERIMENTAL DATA; SURFACE TENSION

Citation Formats

Husein, I F, Zhou, Y, Chan, C, Kleiman, J I, Gudimenko, Y, and Leung, K. Carbon nitride (CN{sub x}) films formed by ion implantation into thin carbon films. United States: N. p., 1996. Web.
Husein, I F, Zhou, Y, Chan, C, Kleiman, J I, Gudimenko, Y, & Leung, K. Carbon nitride (CN{sub x}) films formed by ion implantation into thin carbon films. United States.
Husein, I F, Zhou, Y, Chan, C, Kleiman, J I, Gudimenko, Y, and Leung, K. 1996. "Carbon nitride (CN{sub x}) films formed by ion implantation into thin carbon films". United States.
@article{osti_477398,
title = {Carbon nitride (CN{sub x}) films formed by ion implantation into thin carbon films},
author = {Husein, I F and Zhou, Y and Chan, C and Kleiman, J I and Gudimenko, Y and Leung, K},
abstractNote = {Carbon nitride (CN{sub x}) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C 1s and N 1s spectra of all CN{sub x} films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV, and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CN{sub x}) becomes more amorphous as the two broad peaks at 1,577 cm{sup {minus}1} (G line) and 1,350 cm{sup {minus}1} (D line) observed in the a-C films disappear and a broad asymmetric peak around 1,500 cm{sup {minus}1} is formed. The interfacial tension between the a-C films and the substrate, obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.},
doi = {},
url = {https://www.osti.gov/biblio/477398}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}

Book:
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