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Title: Growth of Si{sub 1{minus}x}Sn{sub x} layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)

Abstract

Synthesis of metastable group-IV binary alloy semiconductor thin films on Si was achieved by the crystalline growth of Si{sub 1{minus}x}Sn{sub x} layers using Sn ion implantation into Si(100) followed either by ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG). Si(100) wafers were implanted at room temperature with 110 keV {sup 120}Sn ions to a dose of 1 {times} 10{sup 16} cm{sup {minus}2} and 2 {times} 10{sup 16} cm{sup {minus}2}. By this process about 90nm-thick amorphous Si{sub 1{minus}x}Sn{sub x} and about 30nm-thick deeper amorphous Si layers were formed. IBIEC experiments performed with 400 keV Ar ions at 300--400 C have induced an epitaxial crystallization of the amorphous alloy layers up to the surface and lattice site occupation of Sn atoms for samples with the lower Sn concentration (LC). XRD analyses have revealed a partial strain compensation for the crystallized layer. Samples with the higher Sn concentration (HC) have shown an epitaxial crystallization accompanied by defects around the peak Sn concentration. SPEG experiments up to 750 C for LC samples have shown an epitaxial crystallization of the fully strained alloy layer, whereas those for HC samples up to 750 C have revealed a collapse of the epitaxial growth around themore » interface of the alloy layer and the Si substrate. Photoluminescence (PL) emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-Sn alloy semiconductors.« less

Authors:
; ; ; ;  [1];  [1];  [2]
  1. Electrotechnical Lab., Tsukuba, Ibaraki (Japan)
  2. Meiji Univ., Kawasaki, Kanagawa (Japan)
Publication Date:
OSTI Identifier:
477394
Report Number(s):
CONF-951155-
ISBN 1-55899-299-5; TRN: IM9724%%271
Resource Type:
Conference
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Ion-solid interactions for materials modification and processing; Poker, D.B. [ed.] [Oak Ridge National Lab., TN (United States)]; Ila, D. [ed.] [Alabama A and M Univ., Normal, AL (United States)]; Cheng, Y.T. [ed.] [General Motors Corp., Warren, MI (United States)]; Harriott, L.R. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Sigmon, T.W. [ed.] [Arizona State Univ., Tempe, AZ (United States)]; PB: 923 p.; Materials Research Society symposium proceedings, Volume 396
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON ALLOYS; TIN ALLOYS; SYNTHESIS; CRYSTAL STRUCTURE; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; ION IMPLANTATION; CRYSTAL GROWTH; EPITAXY

Citation Formats

Kobayashi, N, Hasegawa, M, Hayashi, N, Makita, Y, Shibata, H, Katsumata, H, Meiji Univ., Kawasaki, Kanagawa, and Uekusa, S. Growth of Si{sub 1{minus}x}Sn{sub x} layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG). United States: N. p., 1996. Web.
Kobayashi, N, Hasegawa, M, Hayashi, N, Makita, Y, Shibata, H, Katsumata, H, Meiji Univ., Kawasaki, Kanagawa, & Uekusa, S. Growth of Si{sub 1{minus}x}Sn{sub x} layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG). United States.
Kobayashi, N, Hasegawa, M, Hayashi, N, Makita, Y, Shibata, H, Katsumata, H, Meiji Univ., Kawasaki, Kanagawa, and Uekusa, S. 1996. "Growth of Si{sub 1{minus}x}Sn{sub x} layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)". United States.
@article{osti_477394,
title = {Growth of Si{sub 1{minus}x}Sn{sub x} layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)},
author = {Kobayashi, N and Hasegawa, M and Hayashi, N and Makita, Y and Shibata, H and Katsumata, H and Meiji Univ., Kawasaki, Kanagawa and Uekusa, S},
abstractNote = {Synthesis of metastable group-IV binary alloy semiconductor thin films on Si was achieved by the crystalline growth of Si{sub 1{minus}x}Sn{sub x} layers using Sn ion implantation into Si(100) followed either by ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG). Si(100) wafers were implanted at room temperature with 110 keV {sup 120}Sn ions to a dose of 1 {times} 10{sup 16} cm{sup {minus}2} and 2 {times} 10{sup 16} cm{sup {minus}2}. By this process about 90nm-thick amorphous Si{sub 1{minus}x}Sn{sub x} and about 30nm-thick deeper amorphous Si layers were formed. IBIEC experiments performed with 400 keV Ar ions at 300--400 C have induced an epitaxial crystallization of the amorphous alloy layers up to the surface and lattice site occupation of Sn atoms for samples with the lower Sn concentration (LC). XRD analyses have revealed a partial strain compensation for the crystallized layer. Samples with the higher Sn concentration (HC) have shown an epitaxial crystallization accompanied by defects around the peak Sn concentration. SPEG experiments up to 750 C for LC samples have shown an epitaxial crystallization of the fully strained alloy layer, whereas those for HC samples up to 750 C have revealed a collapse of the epitaxial growth around the interface of the alloy layer and the Si substrate. Photoluminescence (PL) emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-Sn alloy semiconductors.},
doi = {},
url = {https://www.osti.gov/biblio/477394}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {12}
}

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