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Title: Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors

Abstract

A 1.3 {micro}m wavelength vertical-cavity surface-emitting laser (VCSEL) containing proton implanted isolation regions and a dielectric top mirror and a wafer-bonded GaAs/AlAs bottom mirror was fabricated. A room temperature pulsed threshold current density of 1.13 kA/cm{sup 2} and a threshold current of 2 mA have been demonstrated.

Authors:
; ;  [1]; ;  [2]; ;  [3]; ;
  1. Cornell Univ., Ithaca, NY (United States). School of Electrical Engineering
  2. Univ. of Texas, Austin, TX (United States)
  3. Sandia National Labs., Albuquerque, NM (United States). Dept. of Semiconductor Materials
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
474928
Report Number(s):
SAND-97-0941C; CONF-970515-2
ON: DE97005362; TRN: AHC29711%%98
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: QELS `97: quantum electronics and laser science conference, Baltimore, MD (United States), 18-23 May 1997; Other Information: PBD: [1997]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; ION IMPLANTATION; LASER MIRRORS; LASER MATERIALS; THRESHOLD CURRENT; DESIGN; FABRICATION; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES

Citation Formats

Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, and Tu, Y K. Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors. United States: N. p., 1997. Web.
Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, & Tu, Y K. Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors. United States.
Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, and Tu, Y K. Thu . "Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors". United States. https://www.osti.gov/servlets/purl/474928.
@article{osti_474928,
title = {Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors},
author = {Qian, Y and Zhu, Z H and Lo, Y H and Huffaker, D L and Deppe, D G and Hou, H Q and Hammons, B E and Lin, W and Tu, Y K},
abstractNote = {A 1.3 {micro}m wavelength vertical-cavity surface-emitting laser (VCSEL) containing proton implanted isolation regions and a dielectric top mirror and a wafer-bonded GaAs/AlAs bottom mirror was fabricated. A room temperature pulsed threshold current density of 1.13 kA/cm{sup 2} and a threshold current of 2 mA have been demonstrated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {5}
}

Conference:
Other availability
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