RADIATION-ENHANCED DIFFUSION OF BORON IN SILICON.
Journal Article
·
· Appl. Phys. Lett. 15: 246-8(15 Oct 1969).
- Research Organization:
- Stanford Electronics Lab., Calif.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-24-006625
- OSTI ID:
- 4733221
- Journal Information:
- Appl. Phys. Lett. 15: 246-8(15 Oct 1969)., Other Information: Orig. Receipt Date: 31-DEC-70
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light
Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon
Journal Article
·
Sat Apr 01 00:00:00 EST 2006
· Journal of Applied Physics
·
OSTI ID:4733221
+2 more
Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
Journal Article
·
Sat Oct 01 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:4733221
+4 more
Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon
Journal Article
·
Fri Nov 21 00:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:4733221
+1 more
Related Subjects
N33110* -Physics (Solid State)-Radiation Effects
BORON
DEFECTS
DIFFUSION
IMPURITIES
IRRADIATION
KEV RANGE
LAYERS
PROTON BEAMS
RADIATION EFFECTS
SILICON
TEMPERATURE
BORON/diffusion in silicon
proton-irradiation effects on
(E)
PROTONS/effects on boron diffusion in silicon at 10 and 50 keV
(E)
SILICON/radiation effects on boron diffusion in
proton
(E)
BORON
DEFECTS
DIFFUSION
IMPURITIES
IRRADIATION
KEV RANGE
LAYERS
PROTON BEAMS
RADIATION EFFECTS
SILICON
TEMPERATURE
BORON/diffusion in silicon
proton-irradiation effects on
(E)
PROTONS/effects on boron diffusion in silicon at 10 and 50 keV
(E)
SILICON/radiation effects on boron diffusion in
proton
(E)