Recent progress in GaN based field effect transistors
- APA Inc., Blaine, MN (United States)
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Electrical Engineering
Most types of GaN based Field Effect Transistors--MESFETS, MISFETS, heterostructure FETs (HFETs), and Doped Channel HFETs (DC-HFETs) have demonstrated a good performance at both room temperature and elevated temperatures. The DC-HFETs demonstrated the best direct current and microwave characteristics among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel. Other advantages of GaN-based materials for FET applications include a very high breakdown field, a very high saturation field, a high peak velocity, a large conduction and valence band discontinuities at the AlN-GaN heterointerface, and a reasonable thermal conductivity (comparable to that of Si). In this paper, the authors review their recent results obtained for different types of GaN-based transistors.
- Sponsoring Organization:
- Office of Naval Research, Washington, DC (United States); Department of the Army, Washington, DC (United States)
- OSTI ID:
- 470881
- Report Number(s):
- CONF-951155-; ISBN 1-55899-313-4; TRN: IM9722%%3
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Covalent ceramics III -- Science and technology of non-oxides; Hepp, A.F. [ed.] [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center]; Kumta, P.N. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Sullivan, J.J. [ed.] [MKS Instruments, Andover, MA (United States)]; Fischman, G.S. [ed.] [Food and Drug Administration, Rockville, MD (United States)]; Kaloyeros, A.E. [ed.] [Univ. of Albany, NY (United States)]; PB: 499 p.; Materials Research Society symposium proceedings, Volume 410
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with Variable Thickness Channel and Substrate Type
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes