INFLUENCE OF DISLOCATIONS ON THE KINETICS OF THE ACCUMULATION OF RADIATION DEFECTS IN GERMANIUM.
Journal Article
·
· Sov. Phys.-Semicond. (Engl. Transl.) 5: No. 1, 70-4(Jul 1971).
OSTI ID:4708490
- Research Organization:
- Inst. of Semiconductor Physics, Novosibirsk, USSR
- NSA Number:
- NSA-26-019568
- OSTI ID:
- 4708490
- Journal Information:
- Sov. Phys.-Semicond. (Engl. Transl.) 5: No. 1, 70-4(Jul 1971)., Other Information: Orig. Receipt Date: 31-DEC-72; Related Information: Translated from Fiz. Tekh. Poluprov.; 5: No. 1, 85-90(Jan 1971).
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N74100* -Physics (Solid State)-Radiation Effects
CARRIER DENSITY
COMPLEXES
CRYSTAL DEFECTS
CRYSTALS
DISLOCATIONS
ELECTRONS
GERMANIUM
IMPURITIES
MEV RANGE 01-10
MICROHARDNESS
N-TYPE CONDUCTORS
RADIATION EFFECTS
REACTION KINETICS
ELECTRONS/effects on germanium at 3.5 MeV
effects of dislocations on kinetics of defect formation in
GERMANIUM/radioinduced defect complexes in n-type
effects of dislocations and their impurity atmospheres on 3.5-MeV electron
CARRIER DENSITY
COMPLEXES
CRYSTAL DEFECTS
CRYSTALS
DISLOCATIONS
ELECTRONS
GERMANIUM
IMPURITIES
MEV RANGE 01-10
MICROHARDNESS
N-TYPE CONDUCTORS
RADIATION EFFECTS
REACTION KINETICS
ELECTRONS/effects on germanium at 3.5 MeV
effects of dislocations on kinetics of defect formation in
GERMANIUM/radioinduced defect complexes in n-type
effects of dislocations and their impurity atmospheres on 3.5-MeV electron