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Title: INFLUENCE OF IRRADIATION INTENSITY ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.

Authors:
;
Publication Date:
Research Org.:
Inst. of Semiconductor Physics, Novosibirsk, USSR
OSTI Identifier:
4708489
Alternate Identifier(s):
OSTI ID: 4708489
NSA Number:
NSA-26-019571
Resource Type:
Journal Article
Journal Name:
Sov. Phys.-Semicond. (Engl. Transl.) 5: No. 2, 300-1 (Aug 1971).
Additional Journal Information:
Other Information: Orig. Receipt Date: 31-DEC-72; Related Information: Translated from Fiz. Tekh. Poluprov.; 5: No. 2, 346-9(Feb 1971).
Country of Publication:
Country unknown/Code not available
Language:
English
Subject:
N74100* --Physics (Solid State)--Radiation Effects; CRYSTAL DEFECTS; DOSE RATES; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRONS; MICROHARDNESS; RADIATION EFFECTS; SILICON SILICON/radioinduced defects in, effects of beam intensity on 800-keV electron; ELECTRONS/effects on silicon at 800 keV, effects of beam intensity on defects produced in

Citation Formats

Panov, V.I., and Smirnov, L.S. INFLUENCE OF IRRADIATION INTENSITY ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.. Country unknown/Code not available: N. p., 1971. Web.
Panov, V.I., & Smirnov, L.S. INFLUENCE OF IRRADIATION INTENSITY ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.. Country unknown/Code not available.
Panov, V.I., and Smirnov, L.S. Fri . "INFLUENCE OF IRRADIATION INTENSITY ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.". Country unknown/Code not available.
@article{osti_4708489,
title = {INFLUENCE OF IRRADIATION INTENSITY ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.},
author = {Panov, V.I. and Smirnov, L.S.},
abstractNote = {},
doi = {},
journal = {Sov. Phys.-Semicond. (Engl. Transl.) 5: No. 2, 300-1 (Aug 1971).},
number = ,
volume = ,
place = {Country unknown/Code not available},
year = {1971},
month = {1}
}