INFLUENCE OF IRRADIATION INTENSITY ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.
Journal Article
·
· Sov. Phys.-Semicond. (Engl. Transl.) 5: No. 2, 300-1 (Aug 1971).
OSTI ID:4708489
- Research Organization:
- Inst. of Semiconductor Physics, Novosibirsk, USSR
- NSA Number:
- NSA-26-019571
- OSTI ID:
- 4708489
- Journal Information:
- Sov. Phys.-Semicond. (Engl. Transl.) 5: No. 2, 300-1 (Aug 1971)., Other Information: Orig. Receipt Date: 31-DEC-72; Related Information: Translated from Fiz. Tekh. Poluprov.; 5: No. 2, 346-9(Feb 1971).
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N74100* -Physics (Solid State)-Radiation Effects
CRYSTAL DEFECTS
DOSE RATES
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRONS
MICROHARDNESS
RADIATION EFFECTS
SILICON
SILICON/radioinduced defects in
effects of beam intensity on 800-keV electron
ELECTRONS/effects on silicon at 800 keV
effects of beam intensity on defects produced in
CRYSTAL DEFECTS
DOSE RATES
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRONS
MICROHARDNESS
RADIATION EFFECTS
SILICON
SILICON/radioinduced defects in
effects of beam intensity on 800-keV electron
ELECTRONS/effects on silicon at 800 keV
effects of beam intensity on defects produced in