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Title: MECHANISMS RESPONSIBLE FOR THE DAMAGE PRODUCED BY IONIZING RADIATIONS TO MOS TRANSISTORS WITH A P SUBSTRATE. (in French)

Authors:
; ;
Publication Date:
Research Org.:
Centre National de la Recherche Scientifique, Toulouse
OSTI Identifier:
4708379
Alternate Identifier(s):
OSTI ID: 4708379
NSA Number:
NSA-26-009451
Resource Type:
Journal Article
Journal Name:
Compt. Rend., Ser. B 273: No. 12, 436-9(20 Sep 1971).
Additional Journal Information:
Other Information: Orig. Receipt Date: 31-DEC-72
Country of Publication:
France
Language:
French
Subject:
N26500* --Instrumentation--Radiation Effects on Instruments & Instrument Components; CARRIERS; CHARGE TRANSPORT; ELECTRONS; IONIZING RADIATIONS; MOS TRANSISTORS; RADIATION EFFECTS TRANSISTORS/radiation effects on electron mobility of MOS, with P substrates, x; X RADIATION/effects on electron mobility of MOS transistors with P substrates

Citation Formats

Buxo, J., Esteve, D., and Therez, F. MECHANISMS RESPONSIBLE FOR THE DAMAGE PRODUCED BY IONIZING RADIATIONS TO MOS TRANSISTORS WITH A P SUBSTRATE.. France: N. p., 1971. Web.
Buxo, J., Esteve, D., & Therez, F. MECHANISMS RESPONSIBLE FOR THE DAMAGE PRODUCED BY IONIZING RADIATIONS TO MOS TRANSISTORS WITH A P SUBSTRATE.. France.
Buxo, J., Esteve, D., and Therez, F. Fri . "MECHANISMS RESPONSIBLE FOR THE DAMAGE PRODUCED BY IONIZING RADIATIONS TO MOS TRANSISTORS WITH A P SUBSTRATE.". France.
@article{osti_4708379,
title = {MECHANISMS RESPONSIBLE FOR THE DAMAGE PRODUCED BY IONIZING RADIATIONS TO MOS TRANSISTORS WITH A P SUBSTRATE.},
author = {Buxo, J. and Esteve, D. and Therez, F.},
abstractNote = {},
doi = {},
journal = {Compt. Rend., Ser. B 273: No. 12, 436-9(20 Sep 1971).},
number = ,
volume = ,
place = {France},
year = {1971},
month = {1}
}