MECHANISMS RESPONSIBLE FOR THE DAMAGE PRODUCED BY IONIZING RADIATIONS TO MOS TRANSISTORS WITH A P SUBSTRATE. (in French)
Journal Article
·
· Compt. Rend., Ser. B 273: No. 12, 436-9(20 Sep 1971).
OSTI ID:4708379
- Research Organization:
- Centre National de la Recherche Scientifique, Toulouse
- NSA Number:
- NSA-26-009451
- OSTI ID:
- 4708379
- Journal Information:
- Compt. Rend., Ser. B 273: No. 12, 436-9(20 Sep 1971)., Other Information: Orig. Receipt Date: 31-DEC-72
- Country of Publication:
- France
- Language:
- French
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OSTI ID:4708379
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Tue Jan 01 00:00:00 EST 1974
·
OSTI ID:4708379
Related Subjects
N26500* -Instrumentation-Radiation Effects on Instruments & Instrument Components
CARRIERS
CHARGE TRANSPORT
ELECTRONS
IONIZING RADIATIONS
MOS TRANSISTORS
RADIATION EFFECTS
TRANSISTORS/radiation effects on electron mobility of MOS
with P substrates
x
X RADIATION/effects on electron mobility of MOS transistors with P substrates
CARRIERS
CHARGE TRANSPORT
ELECTRONS
IONIZING RADIATIONS
MOS TRANSISTORS
RADIATION EFFECTS
TRANSISTORS/radiation effects on electron mobility of MOS
with P substrates
x
X RADIATION/effects on electron mobility of MOS transistors with P substrates