ENHANCED ANNEALING EFFECTS IN BORON-IMPLANTED LAYERS IN SILICON BY POSTIMPLANTATION OF SILICON IONS.
Journal Article
·
· Appl. Phys. Lett. 20: No. 3, 107-9(1 Feb 1972).
- Research Organization:
- Hughes Aircraft Co., Newport Beach, Calif.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-26-022080
- OSTI ID:
- 4702758
- Journal Information:
- Appl. Phys. Lett. 20: No. 3, 107-9(1 Feb 1972)., Other Information: Orig. Receipt Date: 31-DEC-72
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N74100* -Physics (Solid State)-Radiation Effects
AMORPHOUS STATE
ANNEALING
BORON IONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ION BEAMS
ION IMPLANTATION
KEV RANGE
LAYERS
RADIATION DOSES
SHEETS
SILICON
SILICON IONS
TEMPERATURE DEPENDENCE
SILICON/boron-implanted layers in
enhanced annealing by post implantation of silicon ions
BORON IONS/implantation layers in silicon
enhanced annealing by post implantation of silicon ions
SILICON IONS/effects of 60- to 120-keV
on electrical activity of boron-implanted layers in silicon after annealing
AMORPHOUS STATE
ANNEALING
BORON IONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ION BEAMS
ION IMPLANTATION
KEV RANGE
LAYERS
RADIATION DOSES
SHEETS
SILICON
SILICON IONS
TEMPERATURE DEPENDENCE
SILICON/boron-implanted layers in
enhanced annealing by post implantation of silicon ions
BORON IONS/implantation layers in silicon
enhanced annealing by post implantation of silicon ions
SILICON IONS/effects of 60- to 120-keV
on electrical activity of boron-implanted layers in silicon after annealing