PHOTOLUMINESCENCE OF RADIATION DEFECTS IN ION-IMPLANTED 6H SiC.
Journal Article
·
· Phys. Rev., B 5: No. 8, 3253-9(15 Apr 1972).
- Research Organization:
- Westinghouse Research Labs., Pittsburgh
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-26-027294
- OSTI ID:
- 4689647
- Journal Information:
- Phys. Rev., B 5: No. 8, 3253-9(15 Apr 1972)., Other Information: Orig. Receipt Date: 31-DEC-72
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
Defect Accumulation and Recovery in Ion-Implanted 6H-SiC
Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence
Rapid thermal annealing of ion implanted 6H-SiC by microwave processing
Conference
·
Tue May 14 00:00:00 EDT 2002
·
OSTI ID:4689647
Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence
Journal Article
·
Mon Jan 15 00:00:00 EST 2007
· Journal of Applied Physics
·
OSTI ID:4689647
+5 more
Rapid thermal annealing of ion implanted 6H-SiC by microwave processing
Journal Article
·
Sat Mar 01 00:00:00 EST 1997
· Journal of Electronic Materials
·
OSTI ID:4689647
+4 more
Related Subjects
N74100* -Physics (Solid State)-Radiation Effects
ANNEALING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ION IMPLANTATION
PHOTOLUMINESCENCE
RADIATION EFFECTS
SILICON CARBIDES
TEMPERATURE DEPENDENCE
SILICON CARBIDES/radioinduced defects in 6H
photoluminescence of electron- and ion-
(E/T)
ANNEALING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ION IMPLANTATION
PHOTOLUMINESCENCE
RADIATION EFFECTS
SILICON CARBIDES
TEMPERATURE DEPENDENCE
SILICON CARBIDES/radioinduced defects in 6H
photoluminescence of electron- and ion-
(E/T)