Atomic structure of internal Cu/Al{sub 2}O{sub 3} interfaces
- Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany)
Metal/Ceramic compounds show a wide range of applications, ranging from electronic packaging to biomedical implants. A detailed knowledge of the bimaterial interface is therefore necessary in order to understand the compound properties and their dependence on microstructure and atomic configuration. In this study, thin overlayers of Cu on (0001) {alpha}-Al{sub 2}O{sub 3} were grown by molecular beam epitaxy. The films possess a fixed (111){sub Cu} <110>{sub Cu}{parallel} (0001){sub S}[10{bar 1}0]{sub S} (index S: Al{sub 2}O{sub 3}) orientation relationship to the substrate. High resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) were applied to obtain information about the interface structure and the bonding mechanism of the interface at an atomic level. The HRTEM studies were performed on the Jeol JEM ARM1250, an atomic resolution microscope operated at 1250 kV{sup 3}. The bonding mechanism between Cu and Al{sub 2}O{sub 3} can be determined by an analysis of the energy-loss near-edge structure (ELNES) of the internal interfaces. Those investigations were carried out in a VG HB501 dedicated scanning transmission electron microscope equipped with a parallel EELS (Gatan 666PEELS).
- OSTI ID:
- 468906
- Report Number(s):
- CONF-960877-; TRN: 97:001308-0163
- Resource Relation:
- Conference: Microscopy and microanalysis 1996, Minneapolis, MN (United States), 11-15 Aug 1996; Other Information: PBD: 1996; Related Information: Is Part Of Microscopy and microanalysis 1996; Bailey, G.W.; Corbett, J.M.; Dimlich, R.V.W.; Michael, J.R.; Zaluzec, N.J. [eds.]; PB: 1107 p.
- Country of Publication:
- United States
- Language:
- English
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