Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride
Journal Article
·
· Journal of Materials Research
- Physics and Physical Chemistry Department, General Motors RD Center, Warren, Michigan 48090-9055 (United States)
A BN film containing comparable amounts of sp{sup 2} and sp{sup 3} phases was subjected to a gas-phase chemical etch in a hot-filament environment containing 1{percent} CH{sub 4} in H{sub 2}. After a partial etch, examination by FTIR shows that the sp{sup 2} was preferentially etched, leaving a larger sp{sup 3} fraction than in the unetched film. The possibility that preferential etching could be used to increase the purity of cBN films is discussed. {copyright} {ital 1997 Materials Research Society.}
- OSTI ID:
- 467821
- Journal Information:
- Journal of Materials Research, Vol. 12, Issue 2; Other Information: PBD: Feb 1997
- Country of Publication:
- United States
- Language:
- English
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