Properties of ultra-thin lead zirconate titanate thin films prepared by ozone jet reactive evaporation
- Central Research Laboratory, Hitachi, Limited, 1-280 Higashi koigakubo, Kokubunji, 185, Tokyo (Japan)
Lead zirconate titanate (PZT) thin films were prepared by reactive coevaporation with high-concentration ozone. PZT thin films that demonstrate the highest charge storage density (280 fC/{mu}m{sup 2} at 1.5 V for 75-nm-thick film) yet reported have been fabricated. No fatigue was observed after 10{sup 11} polarization switching cycles even though a Pt electrode is used. A low leakage current of {lt}10{sup {minus}7} A/cm{sup 2} at 1.5 V was attained. These PZT films are promising candidates of an alternative capacitor dielectric for dynamic random access memory (DRAM) and ferroelectric nonvolatile memories. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 467229
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 6; Other Information: PBD: Mar 1997
- Country of Publication:
- United States
- Language:
- English
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