skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN{sub 3})

Abstract

We have grown high-quality GaN films on sapphire using a new nitrogen precursor, hydrazoic acid (HN{sub 3}). Films were grown at 600{degree}C on (0001) sapphire substrates in a low-pressure chemical-vapor-deposition system using triethylgallium and hydrazoic acid as precursors. Subsequently, we have conducted a complete study of the surface, structural, electrical, and optical properties of these GaN films, and our early results are very encouraging. All films were of wurtzite crystal structure, slightly polycrystalline, and {ital n} type at about 2{times}10{sup 17} cm{sup {minus}3}. We find the films to be efficient light emitters in the near-band edge region of the spectrum. Analysis of the emission energies and kinetics suggests that the midgap emission results from a superimposed deep-donor-to-shallow-acceptor emission and a deep-donor-to-valence-band emission, where the deep donor consists of a distribution of energy levels, thereby yielding a broad emission band. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ; ; ; ;  [1]; ; ;  [2];  [3]
  1. Physics Department, Emory University, Atlanta, Georgia 30322 (United States)
  2. Chemistry Department, Emory University, Atlanta, Georgia 30322 (United States)
  3. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30322 (United States)
Publication Date:
OSTI Identifier:
467201
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 81; Journal Issue: 5; Other Information: PBD: Mar 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; PHYSICAL PROPERTIES; CRYSTAL STRUCTURE; PHOTOLUMINESCENCE; ENERGY GAP; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; MICROSTRUCTURE; THIN FILMS; VAPOR PHASE EPITAXY; EMISSION SPECTRA; CRYSTAL GROWTH; deep levels

Citation Formats

Chtchekine, D G, Fu, L P, Gilliland, G D, Chen, Y, Ralph, S E, Bajaj, K K, Bu, Y, Lin, M C, Bacalzo, F T, and Stock, S R. Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN{sub 3}). United States: N. p., 1997. Web. doi:10.1063/1.364253.
Chtchekine, D G, Fu, L P, Gilliland, G D, Chen, Y, Ralph, S E, Bajaj, K K, Bu, Y, Lin, M C, Bacalzo, F T, & Stock, S R. Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN{sub 3}). United States. https://doi.org/10.1063/1.364253
Chtchekine, D G, Fu, L P, Gilliland, G D, Chen, Y, Ralph, S E, Bajaj, K K, Bu, Y, Lin, M C, Bacalzo, F T, and Stock, S R. 1997. "Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN{sub 3})". United States. https://doi.org/10.1063/1.364253.
@article{osti_467201,
title = {Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN{sub 3})},
author = {Chtchekine, D G and Fu, L P and Gilliland, G D and Chen, Y and Ralph, S E and Bajaj, K K and Bu, Y and Lin, M C and Bacalzo, F T and Stock, S R},
abstractNote = {We have grown high-quality GaN films on sapphire using a new nitrogen precursor, hydrazoic acid (HN{sub 3}). Films were grown at 600{degree}C on (0001) sapphire substrates in a low-pressure chemical-vapor-deposition system using triethylgallium and hydrazoic acid as precursors. Subsequently, we have conducted a complete study of the surface, structural, electrical, and optical properties of these GaN films, and our early results are very encouraging. All films were of wurtzite crystal structure, slightly polycrystalline, and {ital n} type at about 2{times}10{sup 17} cm{sup {minus}3}. We find the films to be efficient light emitters in the near-band edge region of the spectrum. Analysis of the emission energies and kinetics suggests that the midgap emission results from a superimposed deep-donor-to-shallow-acceptor emission and a deep-donor-to-valence-band emission, where the deep donor consists of a distribution of energy levels, thereby yielding a broad emission band. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.364253},
url = {https://www.osti.gov/biblio/467201}, journal = {Journal of Applied Physics},
number = 5,
volume = 81,
place = {United States},
year = {Sat Mar 01 00:00:00 EST 1997},
month = {Sat Mar 01 00:00:00 EST 1997}
}