MASS DEPENDENCE OF CRITICAL AMORPHIZING DOSE IN ION IMPLANTATION.
Journal Article
·
· Jap. J. Appl. Phys. 11: No. 7, 1062-3(Jul 1972).
- Research Organization:
- Tokyo Inst. of Tech.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-26-047236
- OSTI ID:
- 4668859
- Journal Information:
- Jap. J. Appl. Phys. 11: No. 7, 1062-3(Jul 1972)., Other Information: Orig. Receipt Date: 31-DEC-72
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
Amorphization processes in self-ion-implanted Si: Dose dependence
Dose dependence of silicon amorphization by ion implantation
Determination of the critical dose for different mass ions implanted into silicon
Journal Article
·
Mon May 27 00:00:00 EDT 1991
· Applied Physics Letters; (United States)
·
OSTI ID:4668859
Dose dependence of silicon amorphization by ion implantation
Thesis/Dissertation
·
Mon Jan 01 00:00:00 EST 1973
·
OSTI ID:4668859
Determination of the critical dose for different mass ions implanted into silicon
Conference
·
Mon Jan 01 00:00:00 EST 1973
·
OSTI ID:4668859
+2 more
Related Subjects
N74100* -Physics (Solid State)-Radiation Effects
AMORPHOUS STATE
EQUATIONS
ION BEAMS
ION IMPLANTATION
MASS
RADIATION DOSES
RADIATION EFFECTS
SILICON
SILICON/ion implantation in
mass dependence of critical amorphizing dose in
(T)
IONS/implantation in silicon
mass dependence of critical amorphizing dose in
(T)
AMORPHOUS STATE
EQUATIONS
ION BEAMS
ION IMPLANTATION
MASS
RADIATION DOSES
RADIATION EFFECTS
SILICON
SILICON/ion implantation in
mass dependence of critical amorphizing dose in
(T)
IONS/implantation in silicon
mass dependence of critical amorphizing dose in
(T)