OBSERVATION OF DEFECT ANNEALING IN NEUTRON-IRRADIATED SILICON BY SPACE- CHARGE-LIMITED CURRENT.
Journal Article
·
· Phys. Rev., B 5: No. 8, 3364-6(15 Apr 1972).
- Research Organization:
- Tulane Univ., New Orleans
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-26-027291
- OSTI ID:
- 4659598
- Journal Information:
- Phys. Rev., B 5: No. 8, 3364-6(15 Apr 1972)., Other Information: Orig. Receipt Date: 31-DEC-72
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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OSTI ID:4659598
Related Subjects
N74100* -Physics (Solid State)-Radiation Effects
ANNEALING
CRYSTAL DEFECTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
FAST NEUTRONS
NEUTRON BEAMS
RADIATION EFFECTS
SILICON
SPACE CHARGE
TRAPS
NEUTRONS
FAST/effects on silicon
observation of defect annealing by space-charge-limited current from
(E)
SILICON/radioinduced defects in
space-charge-limited-current observation of annealing of fast- neutron
(E)
ANNEALING
CRYSTAL DEFECTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
FAST NEUTRONS
NEUTRON BEAMS
RADIATION EFFECTS
SILICON
SPACE CHARGE
TRAPS
NEUTRONS
FAST/effects on silicon
observation of defect annealing by space-charge-limited current from
(E)
SILICON/radioinduced defects in
space-charge-limited-current observation of annealing of fast- neutron
(E)