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Title: RESEARCH ON HIGH-TEMPERATURE STRAIN GAGE ELEMENTS

Abstract

An attempt was made to find materials for use as strain gages at temperatures above 2000 deg F (1093 deg C). Five materials were investigated: silicon carbide, silicon, pyrolytic graphite, rutile, and gallium phosphide. The gage factors of these materials were measured in the temperature range of 25 deg C (77 deg F) to 750 deg C (1382 deg F). The gage factor of silicon carbide was found to be very small even at room temperature, and none of the other materials appeared to offer any possibility of retaining a useful gage factor at 2000 deg F. However, several results which may well be of practical value were obtained: the usefulness of silicon as a strain gage was extended to about 650 deg C (1202 deg F) by a new contacting process, silicon carbide was found to he a good temperature sensor over a wide range of temperature, and rutile was found to be a good oxygen sensor over a fairly wide range of elevated temperature. (auth)

Authors:
Publication Date:
Research Org.:
Electro-Optical Systems, Inc., Pasadena, Calif.
OSTI Identifier:
4654448
Report Number(s):
ARL-63-147
NSA Number:
NSA-17-039370
DOE Contract Number:  
AF33(657)-8869
Resource Type:
Technical Report
Resource Relation:
Other Information: Orig. Receipt Date: 31-DEC-63
Country of Publication:
United States
Language:
English
Subject:
INSTRUMENTS AND INSTRUMENTATION; GAGES; GALLIUM COMPOUNDS; GRAPHITE; HIGH TEMPERATURE; OXYGEN; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SENSITIVITY; SILICON; SILICON CARBIDES; STRESSES; TEMPERATURE; THERMAL STRESSES; TITANIUM OXIDES

Citation Formats

Jordan, C B. RESEARCH ON HIGH-TEMPERATURE STRAIN GAGE ELEMENTS. United States: N. p., 1963. Web.
Jordan, C B. RESEARCH ON HIGH-TEMPERATURE STRAIN GAGE ELEMENTS. United States.
Jordan, C B. Thu . "RESEARCH ON HIGH-TEMPERATURE STRAIN GAGE ELEMENTS". United States.
@article{osti_4654448,
title = {RESEARCH ON HIGH-TEMPERATURE STRAIN GAGE ELEMENTS},
author = {Jordan, C B},
abstractNote = {An attempt was made to find materials for use as strain gages at temperatures above 2000 deg F (1093 deg C). Five materials were investigated: silicon carbide, silicon, pyrolytic graphite, rutile, and gallium phosphide. The gage factors of these materials were measured in the temperature range of 25 deg C (77 deg F) to 750 deg C (1382 deg F). The gage factor of silicon carbide was found to be very small even at room temperature, and none of the other materials appeared to offer any possibility of retaining a useful gage factor at 2000 deg F. However, several results which may well be of practical value were obtained: the usefulness of silicon as a strain gage was extended to about 650 deg C (1202 deg F) by a new contacting process, silicon carbide was found to he a good temperature sensor over a wide range of temperature, and rutile was found to be a good oxygen sensor over a fairly wide range of elevated temperature. (auth)},
doi = {},
url = {https://www.osti.gov/biblio/4654448}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1963},
month = {10}
}

Technical Report:
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