EFFECT OF FAST NEUTRON IRRADIATION ON THE THERMAL CONDUCTIVITY OF SILICON BETWEEN 80 AND 300 K (in French)
Journal Article
·
· Compt. Rend.
OSTI ID:4652204
- Research Organization:
- Centre d'Etudes Nucleaires, Saclay, France
- NSA Number:
- NSA-17-039684
- OSTI ID:
- 4652204
- Journal Information:
- Compt. Rend., Vol. Vol: 257; Other Information: Orig. Receipt Date: 31-DEC-63
- Country of Publication:
- Country unknown/Code not available
- Language:
- French
Similar Records
LOW-TEMPERATURE THERMAL CONDUCTIVITY STUDIES ON SILICON IRRADIATED WITH FAST NEUTRONS AT 80$sup 0$K.
THERMAL AND INJECTION ANNEALING OF NEUTRON-IRRADIATED P-TYPE SILICON BETWEEN 76$sup 0$K AND 300$sup 0$K.
EFFECT OF NEUTRON IRRADIATION AT THE TEMPERATURE OF 80$sup 0$K ON THE THERMAL CONDUCTIVITY OF Si.
Journal Article
·
Thu Jan 01 00:00:00 EST 1970
· J. Low Temp. Phys. 2: 555-71(Jun 1970).
·
OSTI ID:4652204
THERMAL AND INJECTION ANNEALING OF NEUTRON-IRRADIATED P-TYPE SILICON BETWEEN 76$sup 0$K AND 300$sup 0$K.
Technical Report
·
Fri Oct 31 00:00:00 EST 1969
·
OSTI ID:4652204
EFFECT OF NEUTRON IRRADIATION AT THE TEMPERATURE OF 80$sup 0$K ON THE THERMAL CONDUCTIVITY OF Si.
Journal Article
·
Sun Jan 01 00:00:00 EST 1967
· Compt. Rend., Ser. A and B, 265: 609-12(Sept. 4, 1967).
·
OSTI ID:4652204