CHARGED PARTICLE RADIATION DAMAGE IN SEMICONDUCTORS. VII. ENERGY LEVELS OF DEFECT CENTERS IN ELECTRON AND PROTON BOMBARDED SILICON
Bound energy levels resulting from proton and electron bombardment of silicon were investigated through measurements of the temperature dependence of the Hall coefficient and Hall mobility. Three energy levels are found; these are located at 0.17 plus or minus 0.01 ev and 0.40 plus or minus 0.03 ev below the conduction band in n-type silicon and 0.29 plus or minus 0.02 ev above the valence band in p-type silicon. These energy levels have been previously observed under varying conditions in electron and neutron irradiated silicon. Defect introduction rates were measured for each of these levels as a function of particle and particle energy. Protons are found to yield an introduction rate about 100 times greater than electrons in qualitative agreement with earlier lifetime studies. However, it is concluded that the recombination centers which control minority carrier lifetime may not be related to the bound energy levels which control the Hall coefficient and the majority carrier concentration. (auth)
- Research Organization:
- Space Technology Labs., Inc., Redondo Beach, Calif.
- DOE Contract Number:
- NAS5-1851
- NSA Number:
- NSA-17-039673
- OSTI ID:
- 4629229
- Report Number(s):
- NP-13137
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-63
- Country of Publication:
- United States
- Language:
- English
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