CHARGE STATE OF DEFECTS PRODUCED BY IRRADIATION WITH $sup 60$Co $gamma$ RAYS IN THE CHARGE SPACE REGION OF A SILICON SEMICONDUCTOR JUNCTION (in French)
Journal Article
·
· Compt. Rend.
OSTI ID:4619066
- Research Organization:
- CEN, Saclay, France
- NSA Number:
- NSA-19-041974
- OSTI ID:
- 4619066
- Journal Information:
- Compt. Rend., Vol. Vol: 260; Other Information: Orig. Receipt Date: 31-DEC-65
- Country of Publication:
- Country unknown/Code not available
- Language:
- French
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OSTI ID:4619066