In situ ion beam research in Argonne`s intermediate voltage electron microscope

Allen, C W; Ryan, E A

Title: In situ ion beam research in Argonne`s intermediate voltage electron microscope

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Abstract

Since Fall 1995, a state-of-the-art intermediate voltage electron microscope (IVEM) has been operational in the HVEM-Tandem Facility with in situ ion irradiation capabilities similar to those of the HVEM of the Facility. A 300 kV Hitachi H-9000NAR is interfaced to the two ion accelerators of the Facility, with a demonstrated point-to-point spatial resolution for imaging of 0.25 nm with the ion beamline attached to the microscope. The IVEM incorporates a Faraday cup system for ion dosimetry with measurement aperture 6.5 cm from the TEM specimen, which was described in Symposium A of the 1995 MRS Fall Meeting. The IVEM is now employed for a variety of in situ ion beam studies ranging from low dose ion damage experiments with GaAs, in which damage zones individual displacement cascades are observed, to implantation studies in metals, in which irradiation-induced noble gas precipitate mobility is studied in real time. In this presentation, the new instrumentation and its specifications will be described briefly, several basic concepts relating to in situ experiments in transmission electron microscopes will be summarized and examples of in situ experiments will be presented which exploit the experimental capabilities of this new user facility instrumentation.

Authors:: Allen, C W; Ryan, E A

Publication Date:: 1996-11-01

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Energy Research, Washington, DC (United States)

OSTI Identifier:: 459862

Report Number(s):: ANL/MSD/CP-90319; CONF-961202-96
ON: DE97004098; TRN: 97:002391

DOE Contract Number:: W-31109-ENG-38

Resource Type:: Conference

Resource Relation:: Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: Nov 1996

Country of Publication:: United States

Language:: English

Subject:: 66 PHYSICS; 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; 36 MATERIALS SCIENCE; ION BEAMS; IRRADIATION; ELECTRON MICROSCOPES; DESIGN; CRYSTAL DEFECTS; ELECTRON MICROSCOPY; GALLIUM ARSENIDES; ION IMPLANTATION; AMORPHOUS STATE; MICROSTRUCTURE; TANDEM ELECTROSTATIC ACCELERATORS

Citation Formats


                    Allen, C W, and Ryan, E A. In situ ion beam research in Argonne`s intermediate voltage electron microscope.  United States: N. p., 1996. 
        Web.

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                    Allen, C W, & Ryan, E A. In situ ion beam research in Argonne`s intermediate voltage electron microscope.  United States.

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                    Allen, C W, and Ryan, E A. 1996.  
        "In situ ion beam research in Argonne`s intermediate voltage electron microscope".  United States.  https://www.osti.gov/servlets/purl/459862.

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@article{osti_459862,

  title        = {In situ ion beam research in Argonne`s intermediate voltage electron microscope},

  author       = {Allen, C W and Ryan, E A},

  abstractNote = {Since Fall 1995, a state-of-the-art intermediate voltage electron microscope (IVEM) has been operational in the HVEM-Tandem Facility with in situ ion irradiation capabilities similar to those of the HVEM of the Facility. A 300 kV Hitachi H-9000NAR is interfaced to the two ion accelerators of the Facility, with a demonstrated point-to-point spatial resolution for imaging of 0.25 nm with the ion beamline attached to the microscope. The IVEM incorporates a Faraday cup system for ion dosimetry with measurement aperture 6.5 cm from the TEM specimen, which was described in Symposium A of the 1995 MRS Fall Meeting. The IVEM is now employed for a variety of in situ ion beam studies ranging from low dose ion damage experiments with GaAs, in which damage zones individual displacement cascades are observed, to implantation studies in metals, in which irradiation-induced noble gas precipitate mobility is studied in real time. In this presentation, the new instrumentation and its specifications will be described briefly, several basic concepts relating to in situ experiments in transmission electron microscopes will be summarized and examples of in situ experiments will be presented which exploit the experimental capabilities of this new user facility instrumentation.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/459862},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1996},

  month        = {11}

}

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