DETERMINATION OF THE DENSITY AND DIELECTRIC CONSTANT OF THIN Ta$sub 2$$O$$sub 5$ FILMS
Journal Article
·
· Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol.
- Research Organization:
- Bell Telephone Labs., Inc., Murray Hill, N.J.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-19-042868
- OSTI ID:
- 4564510
- Journal Information:
- Journal of the Electrochemical Society (U.S.) Absorbed Electrochem. Technol., Vol. Vol: 112; Other Information: Orig. Receipt Date: 31-DEC-65
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
CURRENT TRANSPORT, EFFECTIVE DIELECTRIC CONSTANT, AND TEMPERATURE OF Ta$sub 2$O$sub 5$ THIN FILMS.
Study of spontaneous and induced absorption in amorphous Ta{sub 2}O{sub 5} and SiO{sub 2} dielectric thin films
Improvement of interfacial and dielectric properties of sputtered Ta{sub 2}O{sub 5} thin films by substrate biasing and the underlying mechanism
Journal Article
·
Fri Jan 01 00:00:00 EST 1971
· Appl. Phys. Lett. 19: No. 10, 403-5(15 Nov 1971).
·
OSTI ID:4564510
Study of spontaneous and induced absorption in amorphous Ta{sub 2}O{sub 5} and SiO{sub 2} dielectric thin films
Journal Article
·
Sun Apr 07 00:00:00 EDT 2013
· Journal of Applied Physics
·
OSTI ID:4564510
+2 more
Improvement of interfacial and dielectric properties of sputtered Ta{sub 2}O{sub 5} thin films by substrate biasing and the underlying mechanism
Journal Article
·
Wed Jun 01 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:4564510