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Title: Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al{bold /}{bold {ital n}}-GaAs{bold /}Al Superconductor-Semiconductor-Superconductor Junctions

Abstract

In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V={plus_minus}2{Delta}/e, {plus_minus}{Delta}/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel. {copyright} {ital 1997} {ital The American Physical Society}

Authors:
; ;  [1]; ; ; ; ;  [2]
  1. Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen O/ (Denmark)
  2. Department of Physics, Technical University of Denmark , Building 309, DK-2800 Lyngby (Denmark)
Publication Date:
OSTI Identifier:
450447
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 78; Journal Issue: 5; Other Information: PBD: Feb 1997
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; SUPERCONDUCTING JUNCTIONS; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; ALUMINIUM; ENERGY GAP; INELASTIC SCATTERING; TEMPERATURE RANGE 0000-0013 K; L-S COUPLING; DIFFUSION LENGTH; INTERFACES

Citation Formats

Kutchinsky, J, So/rensen, C., Kristensen, A, Lindelof, P, Taboryski, R, Clausen, T, Bindslev Hansen, J, Schelde Jacobsen, C, and Skov, J. Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al{bold /}{bold {ital n}}-GaAs{bold /}Al Superconductor-Semiconductor-Superconductor Junctions. United States: N. p., 1997. Web. doi:10.1103/PhysRevLett.78.931.
Kutchinsky, J, So/rensen, C., Kristensen, A, Lindelof, P, Taboryski, R, Clausen, T, Bindslev Hansen, J, Schelde Jacobsen, C, & Skov, J. Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al{bold /}{bold {ital n}}-GaAs{bold /}Al Superconductor-Semiconductor-Superconductor Junctions. United States. https://doi.org/10.1103/PhysRevLett.78.931
Kutchinsky, J, So/rensen, C., Kristensen, A, Lindelof, P, Taboryski, R, Clausen, T, Bindslev Hansen, J, Schelde Jacobsen, C, and Skov, J. Sat . "Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al{bold /}{bold {ital n}}-GaAs{bold /}Al Superconductor-Semiconductor-Superconductor Junctions". United States. https://doi.org/10.1103/PhysRevLett.78.931.
@article{osti_450447,
title = {Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al{bold /}{bold {ital n}}-GaAs{bold /}Al Superconductor-Semiconductor-Superconductor Junctions},
author = {Kutchinsky, J and So/rensen, C. and Kristensen, A and Lindelof, P and Taboryski, R and Clausen, T and Bindslev Hansen, J and Schelde Jacobsen, C and Skov, J},
abstractNote = {In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V={plus_minus}2{Delta}/e, {plus_minus}{Delta}/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel. {copyright} {ital 1997} {ital The American Physical Society}},
doi = {10.1103/PhysRevLett.78.931},
url = {https://www.osti.gov/biblio/450447}, journal = {Physical Review Letters},
number = 5,
volume = 78,
place = {United States},
year = {1997},
month = {2}
}