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Title: Surface photovoltage spectroscopy of porous silicon

Abstract

Results of surface photovoltage spectroscopy on free-standing porous silicon films fabricated from boron-doped Si wafers of various resistivities are presented. We find that all the films have bandtails, which are about 0.3 eV wide, and their optical band gap is about 2 eV. The majority carriers in the strongly luminescent and poorly photoconducting films are holes, while in the weakly luminescent but photoconducting films they are electrons. This difference between the films appears to be due to different oxygen coverage of the silicon nanocrystallites. We conclude that the origin of the strong red-light luminescence is in the electron optical transitions from the conduction bandtail to the valence bandtail. {copyright} {ital 1997} {ital The American Physical Society}

Authors:
;  [1]; ;  [2]; ;  [3]
  1. Department of Electrical Engineering, Tel Aviv University, Ramat Aviv 89678 (Israel)
  2. Ames Laboratory--USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
  3. The Racah Institute of Physics, The Hebrew University, Jerusalem 91904 (Israel)
Publication Date:
Research Org.:
Ames National Laboratory
OSTI Identifier:
450350
DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 55; Journal Issue: 4; Other Information: PBD: Jan 1997
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; ELECTRONIC STRUCTURE; POROUS MATERIALS; BORON ADDITIONS; FILMS; PHOTOVOLTAIC EFFECT; SURFACE PROPERTIES; PHOTOLUMINESCENCE

Citation Formats

Burstein, L, Shapira, Y, Partee, J, Shinar, J, Lubianiker, Y, and Balberg, I. Surface photovoltage spectroscopy of porous silicon. United States: N. p., 1997. Web. doi:10.1103/PhysRevB.55.R1930.
Burstein, L, Shapira, Y, Partee, J, Shinar, J, Lubianiker, Y, & Balberg, I. Surface photovoltage spectroscopy of porous silicon. United States. https://doi.org/10.1103/PhysRevB.55.R1930
Burstein, L, Shapira, Y, Partee, J, Shinar, J, Lubianiker, Y, and Balberg, I. 1997. "Surface photovoltage spectroscopy of porous silicon". United States. https://doi.org/10.1103/PhysRevB.55.R1930.
@article{osti_450350,
title = {Surface photovoltage spectroscopy of porous silicon},
author = {Burstein, L and Shapira, Y and Partee, J and Shinar, J and Lubianiker, Y and Balberg, I},
abstractNote = {Results of surface photovoltage spectroscopy on free-standing porous silicon films fabricated from boron-doped Si wafers of various resistivities are presented. We find that all the films have bandtails, which are about 0.3 eV wide, and their optical band gap is about 2 eV. The majority carriers in the strongly luminescent and poorly photoconducting films are holes, while in the weakly luminescent but photoconducting films they are electrons. This difference between the films appears to be due to different oxygen coverage of the silicon nanocrystallites. We conclude that the origin of the strong red-light luminescence is in the electron optical transitions from the conduction bandtail to the valence bandtail. {copyright} {ital 1997} {ital The American Physical Society}},
doi = {10.1103/PhysRevB.55.R1930},
url = {https://www.osti.gov/biblio/450350}, journal = {Physical Review, B: Condensed Matter},
number = 4,
volume = 55,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1997},
month = {Wed Jan 01 00:00:00 EST 1997}
}