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Title: On the origin of the notching effect during etching in uniform high density plasmas

Abstract

We present a two-dimensional Monte Carlo simulation of profile evolution during the overetching step of polysilicon-on-insulator structures, which considers explicitly (a) electric field effects during the charging transient, (b) etching reactions of energetic ions impinging on the poly-Si, and (c) forward inelastic scattering effects. Realistic energy and angular distributions for ions and electrons are used in trajectory calculations through local electric fields near and in the microstructure. Transient charging of exposed insulator surfaces is found to profoundly affect local sidewall etching (notching). Ion scattering contributions are small but important in matching experimental notch profiles. The model is validated by capturing quantitatively the notch characteristics and also the effects of the line connectivity and open area width on the notch depth, which have been observed experimentally by Nozawa {ital et al.} [Jpn. J. Appl. Phys. {bold 34}, 2107 (1995)]. Elucidation of the mechanisms responsible for the effect facilitates the prediction of ways to minimize or eliminate notching. {copyright} {ital 1997 American Vacuum Society.}

Authors:
;  [1]
  1. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125 (United States)
Publication Date:
OSTI Identifier:
450294
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 15; Journal Issue: 1; Other Information: PBD: Jan 1997
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; PLASMA; ETCHING; SILICON; SPUTTERING; ION COLLISIONS; COMPUTERIZED SIMULATION; MONTE CARLO METHOD; INELASTIC SCATTERING; DISTRIBUTION FUNCTIONS; MICROSTRUCTURE

Citation Formats

Hwang, G.S., and Giapis, K.P. On the origin of the notching effect during etching in uniform high density plasmas. United States: N. p., 1997. Web. doi:10.1116/1.589258.
Hwang, G.S., & Giapis, K.P. On the origin of the notching effect during etching in uniform high density plasmas. United States. doi:10.1116/1.589258.
Hwang, G.S., and Giapis, K.P. Wed . "On the origin of the notching effect during etching in uniform high density plasmas". United States. doi:10.1116/1.589258.
@article{osti_450294,
title = {On the origin of the notching effect during etching in uniform high density plasmas},
author = {Hwang, G.S. and Giapis, K.P.},
abstractNote = {We present a two-dimensional Monte Carlo simulation of profile evolution during the overetching step of polysilicon-on-insulator structures, which considers explicitly (a) electric field effects during the charging transient, (b) etching reactions of energetic ions impinging on the poly-Si, and (c) forward inelastic scattering effects. Realistic energy and angular distributions for ions and electrons are used in trajectory calculations through local electric fields near and in the microstructure. Transient charging of exposed insulator surfaces is found to profoundly affect local sidewall etching (notching). Ion scattering contributions are small but important in matching experimental notch profiles. The model is validated by capturing quantitatively the notch characteristics and also the effects of the line connectivity and open area width on the notch depth, which have been observed experimentally by Nozawa {ital et al.} [Jpn. J. Appl. Phys. {bold 34}, 2107 (1995)]. Elucidation of the mechanisms responsible for the effect facilitates the prediction of ways to minimize or eliminate notching. {copyright} {ital 1997 American Vacuum Society.}},
doi = {10.1116/1.589258},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 1,
volume = 15,
place = {United States},
year = {1997},
month = {1}
}