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Title: Transparent conducting oxides (TCO{close_quote}s) for amorphous silicon solar cells

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.49374· OSTI ID:450125
 [1]; ;  [2]
  1. Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)
  2. Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138 (United States)

The stability of various textured tin oxide and zinc oxide transparent conductors was evaluated against annealing in air, in vacuum or exposed to hydrogen plasma. Only fluorine-doped zinc oxide deposited by atmospheric pressure chemical vapor deposition (APCVD) had stable electrical and optical properties under all conditions. Thin layers of ZnO or TiO{sub 2} greatly improved the plasma resistance of SnO{sub 2}. A new TCO material, niobium-doped titanium dioxide (TiO{sub 2}:Nb) was able to withstand hydrogen plasmas with only slight increases in its optical absorption and conductivity. Composite TCO{close_quote}s consisting of glass/SnO{sub 2}:F/TiO{sub 2}:Nb were shown to provide good electrical contact to amorphous silicon solar cells. {copyright} {ital 1996 American Institute of Physics.}

Sponsoring Organization:
USDOE
OSTI ID:
450125
Report Number(s):
CONF-9605265-; ISSN 0094-243X; TRN: 9703M0054
Journal Information:
AIP Conference Proceedings, Vol. 353, Issue 1; Conference: 13. NREL photovoltaics program review meeting, Lakewood, CO (United States), 16-19 May 1996; Other Information: PBD: Jan 1996
Country of Publication:
United States
Language:
English