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Title: CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells

Abstract

Higher indium proportion in the first precursor was employed to eliminate pits in CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films had large, faceted grains, and a near-optimum composition Cu:In:Ga:Se 24.25:22.21:4.40:49.14. Ga incorporated using a Cu-Ga(22 at. {percent}) alloy target was enhanced by optimizing the time-temperature profiles of selenizations. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} solar cells gave {ital V}{sub oc} of 451.8 mV, {ital J}{sub sc} of 34.5 mA, FF of 57.87{percent}, total area efficiency of 9.02{percent}. CdTe thin films were prepared by heat treatment of magnetron-sputtered elemental Cd/Te stacks. Formation of extraneous oxide phases was avoided by optimizing ambients, temperature, and CdCl{sub 2} treatment. CdTe solar cells gave maximum {ital V}{sub oc} of {approximately}600 mV, {ital J}{sub sc} of {approximately}5 mA.cm{sup {minus}2}, very low FF and efficiency probably due to blocking layer or junction away from CdS{backslash}CdTe interface. {copyright} {ital 1996 American Institute of Physics.}

Authors:
 [1]
  1. Florida Solar Energy Center, 300 State Rd 401, Cape Canaveral, Florida 32920-4099 (United States)
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
450121
Report Number(s):
CONF-9605265-
Journal ID: APCPCS; ISSN 0094-243X; TRN: 9703M0050
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 353; Journal Issue: 1; Conference: 13. NREL photovoltaics program review meeting, Lakewood, CO (United States), 16-19 May 1996; Other Information: PBD: Jan 1996
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SOLAR CELLS; FABRICATION; TEMPERATURE DEPENDENCE; THIN FILMS; GALLIUM SELENIDES; INDIUM SELENIDES; COPPER SELENIDES; HEAT TREATMENTS; EFFICIENCY; IV CHARACTERISTIC

Citation Formats

Dhere, N G. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells. United States: N. p., 1996. Web. doi:10.1063/1.49371.
Dhere, N G. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells. United States. doi:10.1063/1.49371.
Dhere, N G. Mon . "CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells". United States. doi:10.1063/1.49371.
@article{osti_450121,
title = {CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells},
author = {Dhere, N G},
abstractNote = {Higher indium proportion in the first precursor was employed to eliminate pits in CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films had large, faceted grains, and a near-optimum composition Cu:In:Ga:Se 24.25:22.21:4.40:49.14. Ga incorporated using a Cu-Ga(22 at. {percent}) alloy target was enhanced by optimizing the time-temperature profiles of selenizations. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} solar cells gave {ital V}{sub oc} of 451.8 mV, {ital J}{sub sc} of 34.5 mA, FF of 57.87{percent}, total area efficiency of 9.02{percent}. CdTe thin films were prepared by heat treatment of magnetron-sputtered elemental Cd/Te stacks. Formation of extraneous oxide phases was avoided by optimizing ambients, temperature, and CdCl{sub 2} treatment. CdTe solar cells gave maximum {ital V}{sub oc} of {approximately}600 mV, {ital J}{sub sc} of {approximately}5 mA.cm{sup {minus}2}, very low FF and efficiency probably due to blocking layer or junction away from CdS{backslash}CdTe interface. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.49371},
journal = {AIP Conference Proceedings},
number = 1,
volume = 353,
place = {United States},
year = {1996},
month = {1}
}