ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.
- Authors:
- Publication Date:
- Research Org.:
- Standard Telecommunication Labs., Ltd., Harlow, Eng.
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 4487265
- NSA Number:
- NSA-22-044264
- Resource Type:
- Journal Article
- Journal Name:
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 4, 3-5(Aug. 1968).
- Additional Journal Information:
- Other Information: Orig. Receipt Date: 31-DEC-68
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
- Subject:
- N33110* -Physics (Solid State)-Radiation Effects; ACTIVATION; DEFECTS; ENERGY; FAST NEUTRONS; RADIATION EFFECTS; SILICON; NEUTRONS, FAST/effects on silicon, activation energy of defects from; SILICON/radioinduced defects in, activation energy of neutron
Citation Formats
Price, J C, and Kiss, A E. ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.. Country unknown/Code not available: N. p., 1968.
Web. doi:10.1109/TNS.1968.4324996.
Price, J C, & Kiss, A E. ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.. Country unknown/Code not available. https://doi.org/10.1109/TNS.1968.4324996
Price, J C, and Kiss, A E. 1968.
"ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.". Country unknown/Code not available. https://doi.org/10.1109/TNS.1968.4324996.
@article{osti_4487265,
title = {ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.},
author = {Price, J C and Kiss, A E},
abstractNote = {},
doi = {10.1109/TNS.1968.4324996},
url = {https://www.osti.gov/biblio/4487265},
journal = {IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 4, 3-5(Aug. 1968).},
number = ,
volume = ,
place = {Country unknown/Code not available},
year = {Mon Jan 01 00:00:00 EST 1968},
month = {Mon Jan 01 00:00:00 EST 1968}
}
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