skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.

Authors:
;
Publication Date:
Research Org.:
Standard Telecommunication Labs., Ltd., Harlow, Eng.
Sponsoring Org.:
USDOE
OSTI Identifier:
4487265
NSA Number:
NSA-22-044264
Resource Type:
Journal Article
Journal Name:
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 4, 3-5(Aug. 1968).
Additional Journal Information:
Other Information: Orig. Receipt Date: 31-DEC-68
Country of Publication:
Country unknown/Code not available
Language:
English
Subject:
N33110* -Physics (Solid State)-Radiation Effects; ACTIVATION; DEFECTS; ENERGY; FAST NEUTRONS; RADIATION EFFECTS; SILICON; NEUTRONS, FAST/effects on silicon, activation energy of defects from; SILICON/radioinduced defects in, activation energy of neutron

Citation Formats

Price, J C, and Kiss, A E. ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.. Country unknown/Code not available: N. p., 1968. Web. doi:10.1109/TNS.1968.4324996.
Price, J C, & Kiss, A E. ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.. Country unknown/Code not available. https://doi.org/10.1109/TNS.1968.4324996
Price, J C, and Kiss, A E. 1968. "ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.". Country unknown/Code not available. https://doi.org/10.1109/TNS.1968.4324996.
@article{osti_4487265,
title = {ACTIVATION ENERGY OF DEFECTS IN NEUTRON IRRADIATED SILICON.},
author = {Price, J C and Kiss, A E},
abstractNote = {},
doi = {10.1109/TNS.1968.4324996},
url = {https://www.osti.gov/biblio/4487265}, journal = {IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 4, 3-5(Aug. 1968).},
number = ,
volume = ,
place = {Country unknown/Code not available},
year = {Mon Jan 01 00:00:00 EST 1968},
month = {Mon Jan 01 00:00:00 EST 1968}
}