Microstructure and interfacial properties of laterally oxidized Al{sub x}Ga{sub 1{minus}x}As
Oxidation of high Al content Al{sub x}Ga{sub 1-x}As has received much attention due to its use in oxide-aperture, vertical-cavity surface emitting lasers (VCSELs) and for passivating AlAs against environmental degradation. We have recently identified the spinel, gamma phase of Al{sub 2}O{sub 3} in layers laterally oxidized in steam at 450 C for x=0.98 & 0.92 and have seen evidence for an amorphous precursor to the gamma phase. At the interface with the unoxidized Al{sub x}Ga{sub 1-x}As, an {approximately}17nm amorphous phase remains which could account for the excellent electrical properties of oxide-confined VCSELs and help reduce stress concentrations at the oxide terminus.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 443192
- Report Number(s):
- SAND-96-1718C; CONF-961202-38; ON: DE97002529
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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