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Title: Theory of High Frequency Rectification by Silicon Crystals

Abstract

The excellent performance of British ''red dot'' crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal. C. For high conversion efficiency, the product of this capacity and of the ''forward'' (bulk) resistance R{sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10{sup -3} cm. For a point contact the radius must be less than 1.5 x 10{sup -3} cm. and the resulting small area is conductive to burn-out. The effect of ''tapping'' is probably to reduce the area of contact.

Authors:
Publication Date:
Research Org.:
MIT Radiation Laboratory (US)
Sponsoring Org.:
US Atomic Energy Commission (AEC) (US)
OSTI Identifier:
4415436
Report Number(s):
RL-184
TRN: US200507%%8
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 29 Oct 1942
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BOUNDARY LAYERS; PERFORMANCE; SILICON; CAPACITORS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRONIC EQUIPMENT; RECTIFIERS; FREQUENCY DEPENDENCE

Citation Formats

Bethe, H.A. Theory of High Frequency Rectification by Silicon Crystals. United States: N. p., 1942. Web. doi:10.2172/4415436.
Bethe, H.A. Theory of High Frequency Rectification by Silicon Crystals. United States. doi:10.2172/4415436.
Bethe, H.A. Thu . "Theory of High Frequency Rectification by Silicon Crystals". United States. doi:10.2172/4415436. https://www.osti.gov/servlets/purl/4415436.
@article{osti_4415436,
title = {Theory of High Frequency Rectification by Silicon Crystals},
author = {Bethe, H.A.},
abstractNote = {The excellent performance of British ''red dot'' crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal. C. For high conversion efficiency, the product of this capacity and of the ''forward'' (bulk) resistance R{sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10{sup -3} cm. For a point contact the radius must be less than 1.5 x 10{sup -3} cm. and the resulting small area is conductive to burn-out. The effect of ''tapping'' is probably to reduce the area of contact.},
doi = {10.2172/4415436},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Oct 29 00:00:00 EDT 1942},
month = {Thu Oct 29 00:00:00 EDT 1942}
}

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