skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254

Abstract

S>For Sandia Corp.

Authors:
Publication Date:
Research Org.:
New Mexico Univ., Albuquerque (USA). Bureau of Engineering Research
OSTI Identifier:
4383432
Report Number(s):
SLA-73-890
NSA Number:
NSA-29-012481
DOE Contract Number:  
51-3475-I
Resource Type:
Technical Report
Resource Relation:
Other Information: For Sandia Corp. Orig. Receipt Date: 30-JUN-74
Country of Publication:
United States
Language:
English
Subject:
N42000* -Engineering; N50130 -Metals, Ceramics, & Other Materials-Ceramics & Cermets-Properties, Structure & Phase Studies; *SILICON- SURFACE COATING; CRYSTAL GROWTH; FILMS; SPINELS; SUBSTRATES

Citation Formats

Colclaser, R A. Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254. United States: N. p., 1973. Web.
Colclaser, R A. Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254. United States.
Colclaser, R A. 1973. "Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254". United States.
@article{osti_4383432,
title = {Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254},
author = {Colclaser, R A},
abstractNote = {S>For Sandia Corp.},
doi = {},
url = {https://www.osti.gov/biblio/4383432}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Aug 01 00:00:00 EDT 1973},
month = {Wed Aug 01 00:00:00 EDT 1973}
}

Technical Report:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item. Keep in mind that many technical reports are not cataloged in WorldCat.

Save / Share: