Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254
Abstract
S>For Sandia Corp.
- Authors:
- Publication Date:
- Research Org.:
- New Mexico Univ., Albuquerque (USA). Bureau of Engineering Research
- OSTI Identifier:
- 4383432
- Report Number(s):
- SLA-73-890
- NSA Number:
- NSA-29-012481
- DOE Contract Number:
- 51-3475-I
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: For Sandia Corp. Orig. Receipt Date: 30-JUN-74
- Country of Publication:
- United States
- Language:
- English
- Subject:
- N42000* -Engineering; N50130 -Metals, Ceramics, & Other Materials-Ceramics & Cermets-Properties, Structure & Phase Studies; *SILICON- SURFACE COATING; CRYSTAL GROWTH; FILMS; SPINELS; SUBSTRATES
Citation Formats
Colclaser, R A. Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254. United States: N. p., 1973.
Web.
Colclaser, R A. Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254. United States.
Colclaser, R A. 1973.
"Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254". United States.
@article{osti_4383432,
title = {Effect of growth parameters on the electrical properties and crystal structure of heteroepitaxial silicon on spinel and sapphire. Technical report EE-207(73)SAN-254},
author = {Colclaser, R A},
abstractNote = {S>For Sandia Corp.},
doi = {},
url = {https://www.osti.gov/biblio/4383432},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Aug 01 00:00:00 EDT 1973},
month = {Wed Aug 01 00:00:00 EDT 1973}
}
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