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Title: Transient heating effects during rapid thermal processing of semiconductors

Abstract

Rapid Thermal Processing (RTP) involves heating a single wafer at a high rate, to a high temperature, and for a short duration. During RTP there is limited dopant redistribution, improved temperature uniformity for large diameter wafers, and photon-enhanced effects. Two critical problems plaguing RTP are temperature measurements and transient temperature uniformity. The fundamental phenomena associated with both problems are the varying radiative properties of wafers. Electronic materials have radiative properties which are a strong function of temperature, wavelength, and dopant density. Thin films, patterns, and surface roughness are also important to consider as well as the spectral characteristics of the heat source. All these factors affect the radiative properties transiently and spatially during processing. A numerical model has been developed to investigate the effect of the transiently changing radiative properties on the thermal behavior during RTP.

Authors:
;  [1]
  1. Tufts Univ., Medford, MA (United States)
Publication Date:
Sponsoring Org.:
National Science Foundation, Washington, DC (United States)
OSTI Identifier:
435676
Report Number(s):
CONF-951135-
ISBN 0-7918-1751-2; TRN: IM9710%%334
Resource Type:
Conference
Resource Relation:
Conference: 1995 International mechanical engineering congress and exhibition, San Francisco, CA (United States), 12-17 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of Proceedings of the ASME Heat Transfer Division. Volume 2: Fire and combustion systems; Thermal-hydraulics in nuclear and hazardous waste processing and disposal; Transport phenomena in materials processing; HTD-Volume 317-2; Atreya, A. [ed.] [Univ. of Michigan, Ann Arbor, MI (United States)]; Gritzo, L. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Saltiel, C. [ed.] [SCRAM Technology, Inc., Gainesville, FL (United States)] [and others]; PB: 592 p.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; HEAT TREATMENTS; MATHEMATICAL MODELS; DOPED MATERIALS; TEMPERATURE DISTRIBUTION; THERMAL ANALYSIS; SILICON

Citation Formats

Wong, P Y, and Miaoulis, I N. Transient heating effects during rapid thermal processing of semiconductors. United States: N. p., 1995. Web.
Wong, P Y, & Miaoulis, I N. Transient heating effects during rapid thermal processing of semiconductors. United States.
Wong, P Y, and Miaoulis, I N. Sun . "Transient heating effects during rapid thermal processing of semiconductors". United States.
@article{osti_435676,
title = {Transient heating effects during rapid thermal processing of semiconductors},
author = {Wong, P Y and Miaoulis, I N},
abstractNote = {Rapid Thermal Processing (RTP) involves heating a single wafer at a high rate, to a high temperature, and for a short duration. During RTP there is limited dopant redistribution, improved temperature uniformity for large diameter wafers, and photon-enhanced effects. Two critical problems plaguing RTP are temperature measurements and transient temperature uniformity. The fundamental phenomena associated with both problems are the varying radiative properties of wafers. Electronic materials have radiative properties which are a strong function of temperature, wavelength, and dopant density. Thin films, patterns, and surface roughness are also important to consider as well as the spectral characteristics of the heat source. All these factors affect the radiative properties transiently and spatially during processing. A numerical model has been developed to investigate the effect of the transiently changing radiative properties on the thermal behavior during RTP.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {12}
}

Conference:
Other availability
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