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Title: Generalized {ital t}-{ital t}{sup {prime}}-{ital J} model: Parameters and single-particle spectrum for electrons and holes in copper oxides

Journal Article · · Physical Review, B: Condensed Matter
; ;  [1]
  1. Institute of Semiconductor Physics, 630090, Novosibirsk (Russia)

A microscopically based Hamiltonian of the generalized {ital t}-{ital t}{sup {prime}}-{ital J} model is presented. Two types of the additional {ital t}{sup {prime}} terms are discussed. The numerical range of the amplitudes corresponding to the additional {ital t}{sup {prime}} terms for the real CuO{sub 2} planes is derived from the three-band model calculations. Using the variational spin-polaron approach the single-carrier dispersions in the generalized {ital t}-{ital t}{sup {prime}}-{ital J} model are calculated both for the hole- and electron-doped systems. The hole and electron band minima are found to be at points ({plus_minus}{pi}/2,{plus_minus}{pi}/2), (0,{plus_minus}{pi}), and ({plus_minus}{pi},0), respectively. The band minima shifts {parallel}{Delta}{sub (0,{pi}){minus}({pi}/2,{pi}/2)}{parallel} are not small ({approximately}{ital J}). The bandwidths for both cases of doping are found to be 1.5{endash}4.0 times larger than those in the {ital t}-{ital J} model. {copyright} {ital 1996 The American Physical Society.}

OSTI ID:
434492
Journal Information:
Physical Review, B: Condensed Matter, Vol. 53, Issue 1; Other Information: PBD: Jan 1996
Country of Publication:
United States
Language:
English

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