DYNAMIC POLARIZATION OF THE NUCLEI OF SILICON 29 IN SILICON (in French)
Journal Article
·
· Compt. rend.
OSTI ID:4335839
The extension of the Overhauser effect to semi-conductors has resulted in considerable augmentation of the nuclear resonance signal caused by Si/sup 29/ in saturating the resonance of the conducting electrons of a sample of silicon. The nuclear polarization thus obtained lasts for several minutes at ordinary temperature. (tr-auth)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-12-007429
- OSTI ID:
- 4335839
- Journal Information:
- Compt. rend., Vol. Vol: 246; Other Information: Orig. Receipt Date: 31-DEC-58
- Country of Publication:
- Country unknown/Code not available
- Language:
- French
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