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Title: Radiation failure modes in CMOS integrated circuits

Abstract

The radiation sensitivify of commercial and laboratory CMOS processes has been investigated. Failure levels for CMOS circuits have been related to transistor threshold voltage shifts and typical inverter failure modes. CMOS inverter characteristics have been measured as a function of the ionizing radiation exposure for devices fabricated by 10 different manufacturers and representing a total of 15 different processes. By selecting certain processes, CMOS circuits can be obtained which will operate after exposure to an ionizing radiation dose greater than 10/sup 6/ rads (Si). ( auth)

Authors:
;
Publication Date:
Research Org.:
Sandia Labs., Albuquerque, NM
OSTI Identifier:
4312863
NSA Number:
NSA-29-029580
Resource Type:
Conference
Journal Name:
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 300-306
Additional Journal Information:
Conference: Annual conference on nuclear and space radiation effects, Logan, UT, 23 Jul 1973; Other Information: Orig. Receipt Date: 30-JUN-74
Country of Publication:
Country unknown/Code not available
Language:
English
Subject:
N46300* -Instrumentation-Radiation Effects on Instrument Components, Instruments, or Electronic Systems; *INTEGRATED CIRCUITS- PHYSICAL RADIATION EFFECTS; FAILURES; MOS TRANSISTORS; RADIATION HARDENING; RADIOSENSITIVITY

Citation Formats

Burghard, R A, and Gwyn, C W. Radiation failure modes in CMOS integrated circuits. Country unknown/Code not available: N. p., 1973. Web.
Burghard, R A, & Gwyn, C W. Radiation failure modes in CMOS integrated circuits. Country unknown/Code not available.
Burghard, R A, and Gwyn, C W. Sat . "Radiation failure modes in CMOS integrated circuits". Country unknown/Code not available.
@article{osti_4312863,
title = {Radiation failure modes in CMOS integrated circuits},
author = {Burghard, R A and Gwyn, C W},
abstractNote = {The radiation sensitivify of commercial and laboratory CMOS processes has been investigated. Failure levels for CMOS circuits have been related to transistor threshold voltage shifts and typical inverter failure modes. CMOS inverter characteristics have been measured as a function of the ionizing radiation exposure for devices fabricated by 10 different manufacturers and representing a total of 15 different processes. By selecting certain processes, CMOS circuits can be obtained which will operate after exposure to an ionizing radiation dose greater than 10/sup 6/ rads (Si). ( auth)},
doi = {},
journal = {IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 300-306},
number = ,
volume = ,
place = {Country unknown/Code not available},
year = {1973},
month = {12}
}

Conference:
Other availability
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