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Title: Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device

Abstract

In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{sub 2}:H{sub 2}; 95:5) above 500{degrees}C leads to spontaneous incorporation of mobile H{sup +} ions in the buried SiO{sub 2} layer. We demonstrate that, unlike the alkali ions feared as killer contaminants in the early days, the space charge distribution of these mobile protons within the buried oxide layer can be very well controlled and easily rearranged with relatively high speed at room temperature. The hysteresis in the flat band voltage shift provides a unique vehicle to study proton kinetics in silicon dioxide thin films. It is further shown how this effect can be used as the basis for a reliable nonvolatile FET memory device that has potential to be competitive with state-of-the-art Si-based memory technologies. The power of this novel device is its simplicity; it requires few processing steps, all of which are standard in Si integrated-circuit fabrication.

Authors:
; ;  [1]
  1. and others
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Financial Management and Controller, Washington, DC (United States)
OSTI Identifier:
431162
Report Number(s):
SAND-97-0062C; CONF-961202-25
ON: DE97002463; TRN: 97:001017
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICA; PHYSICAL PROPERTIES; ANNEALING; HYSTERESIS; PROTONS; THIN FILMS; INTEGRATED CIRCUITS; HYDROGEN IONS; ELECTRIC POTENTIAL

Citation Formats

Vanheusden, K., Warren, W.L., and Fleetwood, D.M.. Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device. United States: N. p., 1996. Web.
Vanheusden, K., Warren, W.L., & Fleetwood, D.M.. Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device. United States.
Vanheusden, K., Warren, W.L., and Fleetwood, D.M.. Tue . "Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device". United States. doi:. https://www.osti.gov/servlets/purl/431162.
@article{osti_431162,
title = {Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device},
author = {Vanheusden, K. and Warren, W.L. and Fleetwood, D.M.},
abstractNote = {In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{sub 2}:H{sub 2}; 95:5) above 500{degrees}C leads to spontaneous incorporation of mobile H{sup +} ions in the buried SiO{sub 2} layer. We demonstrate that, unlike the alkali ions feared as killer contaminants in the early days, the space charge distribution of these mobile protons within the buried oxide layer can be very well controlled and easily rearranged with relatively high speed at room temperature. The hysteresis in the flat band voltage shift provides a unique vehicle to study proton kinetics in silicon dioxide thin films. It is further shown how this effect can be used as the basis for a reliable nonvolatile FET memory device that has potential to be competitive with state-of-the-art Si-based memory technologies. The power of this novel device is its simplicity; it requires few processing steps, all of which are standard in Si integrated-circuit fabrication.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}

Conference:
Other availability
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