Spin interactions between slow electrons and amino acid films. Final report, 1 June 1968--28 February 1972
- Authors:
- Publication Date:
- Research Org.:
- Georgia Inst. of Tech., Atlanta (USA). Engineering Experiment Station
- OSTI Identifier:
- 4309332
- Report Number(s):
- ORO-3799-8
- NSA Number:
- NSA-30-002702
- DOE Contract Number:
- AT(40-1)-3799
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-74
- Country of Publication:
- United States
- Language:
- English
- Subject:
- N40300* -Chemistry-Radiation Chemistry; N48110 -Life Sciences-Radiation Effects on Biochemicals-In-Vitro; *AMINO ACIDS- CHEMICAL RADIATION EFFECTS; *BIOLOGICAL RADIATION EFFECTS- RESEARCH PROGRAMS; AROMATICS; ELECTRON BEAMS; ELECTRONS; EV RANGE 10- 100; FILMS
Citation Formats
Yeargers, E. Spin interactions between slow electrons and amino acid films. Final report, 1 June 1968--28 February 1972. United States: N. p., 1972.
Web. doi:10.2172/4309332.
Yeargers, E. Spin interactions between slow electrons and amino acid films. Final report, 1 June 1968--28 February 1972. United States. doi:10.2172/4309332.
Yeargers, E. Sat .
"Spin interactions between slow electrons and amino acid films. Final report, 1 June 1968--28 February 1972". United States.
doi:10.2172/4309332. https://www.osti.gov/servlets/purl/4309332.
@article{osti_4309332,
title = {Spin interactions between slow electrons and amino acid films. Final report, 1 June 1968--28 February 1972},
author = {Yeargers, E.},
abstractNote = {},
doi = {10.2172/4309332},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1972},
month = {Sat Jan 01 00:00:00 EST 1972}
}
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Study of the generation and application of radiation from channeled electrons and positrons. Final scientific report, 1 June 1983-28 February 1986
Experiments were conducted to evaluate channeling radiation as a useful source of hard x rays. The following crystals were studied: lithium hydride, lithium deuteride, diamond, beryllium, lithium fluoride, silicon, gallium arsenide, and tungsten. In general, higher-Z materials have intrinsically higher channeling radiation cross sections but they suffer from higher scattering cross sections. It was also found that electron and positron occupation lengths for silicon increase with incident particle energy and are larger for positrons than electrons. Radiation characteristics were also found to be very sensitive to crystal temperature. Encouraging results were obtained when the currents of the incident electron beamsmore »