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Title: Recent results from a large-scale plasma source ion implantation experiment

Conference ·
OSTI ID:42985

In Plasma Source Ion Implantation (PSII), a target to be implanted is immersed in a weakly ionized plasma and pulsed to a high negative voltage. Ions in the plasma are accelerated toward the target and implanted in its surface, thereby modifying the properties of the surface. A large-scale PSII facility is in operation at Los Alamos, in which objects with areas larger than 4 m{sup 2} have been implanted. Implantation is performed in a 4.6 m-long, 1.5 m-diameter cylindrical vacuum chamber, and driven by a high-voltage pulse modulator capable of producing 50 A peak current pulses of 20 {mu}s duration at a frequency of 2 kHz. Recent work has centered around a power supply upgrade to allow implants at over 100 kV, and expansion of their repertoire of plasmas to include methane, cetylene, oxygen, and ammonia, in addition to nitrogen and argon. This talk will cover interesting problems encountered in operating at these higher voltages and new gases, and cover target fixturing issues in vacuum chambers of this large size.

OSTI ID:
42985
Report Number(s):
CONF-940604-; ISBN 0-7803-2006-9; TRN: IM9521%%149
Resource Relation:
Conference: 1994 Institute of Electrical and Electronic Engineers (IEEE) international conference on plasma science, Santa Fe, NM (United States), 6-8 Jun 1994; Other Information: PBD: 1994; Related Information: Is Part Of IEEE conference record -- Abstracts; PB: 252 p.
Country of Publication:
United States
Language:
English

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