Sensor Driven Intelligent Control System For Plasma Processing - Final CRADA Report
Abstract
This Cooperative Research and Development Agreement (CRADA) between Innovative Computing Technologies, Inc. (IC Tech) and Martin Marietta Energy Systems (MMES) was undertaken to contribute to improved process control for microelectronic device fabrication. Process data from an amorphous silicon thin film deposition experiment was acquired to validate the performance of an intelligent, adaptive, neurally-inspired control software module designed to provide closed loop control of plasma processing machines used in the microelectronics industry. Data acquisition software was written using LabView The data was collected from an inductively coupled plasma (ICP) source, which was available for this project through LMES's RF/Microwave Technology Center. Experimental parameters measured were RF power, RF current and voltage on the antenna delivering power to the plasma, hydrogen and silane flow rate, chamber pressure, substrate temperature and H-alpha optical emission. Experimental results obtained were poly-crystallin silicon deposition rate, crystallinity, crystallographic orientation and electrical conductivity. Owing to experimental delays resulting from hardware failures, it was not possible to assemble a complete data for IC Tech use within the time and resource constraints of the CRADA. IC Tech was therefore not able to verify the performance of their existing models and control structures and validate model performance under this CRADA.
- Authors:
- Publication Date:
- Research Org.:
- Oak Ridge Y-12 Plant, Oak Ridge, TN (US)
- Sponsoring Org.:
- USDOE Office of Defense Programs (DP) (US)
- OSTI Identifier:
- 4286
- Report Number(s):
- Y/AMT-615; Crada Number Y-1296-0430
Crada Number Y-1296-0430; TRN: AH200114%%64
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: PBD: 23 Feb 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING; MICROELECTRONIC CIRCUITS; FABRICATION; CLOSED-LOOP CONTROL; CONTROL SYSTEMS; ELECTRIC CONDUCTIVITY; PLASMA HEATING; PROCESS CONTROL; SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE
Citation Formats
Bell, G, and Campbell, V B. Sensor Driven Intelligent Control System For Plasma Processing - Final CRADA Report. United States: N. p., 1998.
Web. doi:10.2172/4286.
Bell, G, & Campbell, V B. Sensor Driven Intelligent Control System For Plasma Processing - Final CRADA Report. United States. https://doi.org/10.2172/4286
Bell, G, and Campbell, V B. 1998.
"Sensor Driven Intelligent Control System For Plasma Processing - Final CRADA Report". United States. https://doi.org/10.2172/4286. https://www.osti.gov/servlets/purl/4286.
@article{osti_4286,
title = {Sensor Driven Intelligent Control System For Plasma Processing - Final CRADA Report},
author = {Bell, G and Campbell, V B},
abstractNote = {This Cooperative Research and Development Agreement (CRADA) between Innovative Computing Technologies, Inc. (IC Tech) and Martin Marietta Energy Systems (MMES) was undertaken to contribute to improved process control for microelectronic device fabrication. Process data from an amorphous silicon thin film deposition experiment was acquired to validate the performance of an intelligent, adaptive, neurally-inspired control software module designed to provide closed loop control of plasma processing machines used in the microelectronics industry. Data acquisition software was written using LabView The data was collected from an inductively coupled plasma (ICP) source, which was available for this project through LMES's RF/Microwave Technology Center. Experimental parameters measured were RF power, RF current and voltage on the antenna delivering power to the plasma, hydrogen and silane flow rate, chamber pressure, substrate temperature and H-alpha optical emission. Experimental results obtained were poly-crystallin silicon deposition rate, crystallinity, crystallographic orientation and electrical conductivity. Owing to experimental delays resulting from hardware failures, it was not possible to assemble a complete data for IC Tech use within the time and resource constraints of the CRADA. IC Tech was therefore not able to verify the performance of their existing models and control structures and validate model performance under this CRADA.},
doi = {10.2172/4286},
url = {https://www.osti.gov/biblio/4286},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 1998},
month = {Mon Feb 23 00:00:00 EST 1998}
}