Redistribution of boron in silicon after high-temperature proton irradiation

Journal Article · Sat Feb 01 00:00:00 EST 1975 · Appl. Phys. Lett., v. 26, no. 3, pp. 77-80

DOI:https://doi.org/10.1063/1.88077· OSTI ID:4267205

Baruch, P; Monnier, J; Blanchard, B; Castaing, C

• Research Organization: Groupe de Physique des Solides de l'E.N.S., Tour 23, 2 Place Jussieu, Paris 5e, France
• Sponsoring Organization: USDOE
• NSA Number: NSA-31-017556
• OSTI ID: 4267205
• Journal Information: Appl. Phys. Lett., v. 26, no. 3, pp. 77-80, Other Information: Orig. Receipt Date: 30-JUN-75
• Country of Publication: United States
• Language: English

Related Subjects

N50340* -Metals
Ceramics
& Other Materials-Plastics & Other Materials-Radiation Effects
*SILICON- PHYSICAL RADIATION EFFECTS
BORON
DIFFUSION
IMPURITIES
IRRADIATION
MASS SPECTROSCOPY
NUCLEAR REACTIONS
PRECIPITATION
PROTON BEAMS