Electron and neutron damage in n- and p-channel junction field effect transistors
Journal Article
·
· Radiat. Eff., v. 21, no. 2, pp. 99-104
OSTI ID:4259302
- Research Organization:
- Australian Atomic Energy Commission Research Establishment, Sutherland
- NSA Number:
- NSA-30-032283
- OSTI ID:
- 4259302
- Journal Information:
- Radiat. Eff., v. 21, no. 2, pp. 99-104, Other Information: Orig. Receipt Date: 31-DEC-74; Bib. Info. Source: UK (United Kingdom (sent to DOE from))
- Country of Publication:
- United Kingdom
- Language:
- English
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+1 more
Related Subjects
N46300* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
*FIELD EFFECT TRANSISTORS- PHYSICAL RADIATION EFFECTS
ANNEALING
E CENTERS
ELECTRICAL PROPERTIES
ELECTRONS
HIGH TEMPERATURE
JUNCTION TRANSISTORS
N-TYPE CONDUCTORS
NEUTRONS
P-TYPE CONDUCTORS
SILICON
SILICON DIODES
Instruments
or Electronic Systems
*FIELD EFFECT TRANSISTORS- PHYSICAL RADIATION EFFECTS
ANNEALING
E CENTERS
ELECTRICAL PROPERTIES
ELECTRONS
HIGH TEMPERATURE
JUNCTION TRANSISTORS
N-TYPE CONDUCTORS
NEUTRONS
P-TYPE CONDUCTORS
SILICON
SILICON DIODES