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Title: Incorporation of hydrogen into III-V nitrides during processing

Abstract

Hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water, and other process steps, in addition to its effects during metalorganic chemical vapor deposition or metalorganic molecular beam epitaxial growth. The hydrogen is bound at defects or impurities and passivates their electrical activity. Reactivation of passivated shallow donors in the nitrides occurs at 450-550{degree}C, but evolution from the crystal requires much higher temperatures (>=800{degree}C for GaN). 9 refs., 9 figs.

Authors:
; ;  [1]
  1. Univ. of Florida, Gainesville, FL (United States) [and others
Publication Date:
Research Org.:
Sandia National Laboratory
OSTI Identifier:
420809
Report Number(s):
CONF-950661-
Journal ID: JECMA5; ISSN 0361-5235; CNN: Grant DMR-9421109;Grant N00014-92-J-1895; TRN: 96:006536-013
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 25; Journal Issue: 5; Conference: 37. electronic materials conference, Charlottesville, VA (United States), 21-23 Jun 1995; Other Information: PBD: May 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; PROCESSING; ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; HYDROGEN; DIFFUSION; DOPED MATERIALS; ETCHING; CHEMICAL VAPOR DEPOSITION; BOILING; ELECTRONS; VALENCE; BINDING ENERGY; PASSIVATION; TEMPERATURE DEPENDENCE; IMPURITIES

Citation Formats

Pearton, S.J., Abernathy, C.R., and Vartuli, C.B. Incorporation of hydrogen into III-V nitrides during processing. United States: N. p., 1996. Web. doi:10.1007/BF02666647.
Pearton, S.J., Abernathy, C.R., & Vartuli, C.B. Incorporation of hydrogen into III-V nitrides during processing. United States. doi:10.1007/BF02666647.
Pearton, S.J., Abernathy, C.R., and Vartuli, C.B. Wed . "Incorporation of hydrogen into III-V nitrides during processing". United States. doi:10.1007/BF02666647.
@article{osti_420809,
title = {Incorporation of hydrogen into III-V nitrides during processing},
author = {Pearton, S.J. and Abernathy, C.R. and Vartuli, C.B.},
abstractNote = {Hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water, and other process steps, in addition to its effects during metalorganic chemical vapor deposition or metalorganic molecular beam epitaxial growth. The hydrogen is bound at defects or impurities and passivates their electrical activity. Reactivation of passivated shallow donors in the nitrides occurs at 450-550{degree}C, but evolution from the crystal requires much higher temperatures (>=800{degree}C for GaN). 9 refs., 9 figs.},
doi = {10.1007/BF02666647},
journal = {Journal of Electronic Materials},
number = 5,
volume = 25,
place = {United States},
year = {1996},
month = {5}
}