Infrared focal plane array incorporating silicon IC process compatible bolometer

Journal Article · Fri Nov 01 00:00:00 EST 1996 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/16.543017· OSTI ID:418065

Tanaka, Akio ^[1]; Matsumoto, Shouhei ^[2]; Tsukamoto, Nanao ^[3]

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1. NEC Corp., Kanagawa (JHP). Microelectronics Research Labs.
2. NEC Corp., Tokyo (Japan). Guidance and Electro-Optics Div.
3. NEC Aerospace Systems, Tokyo (Japan); and others

A 128 x 128 element bolometer infrared image sensor using thin film titanium is proposed. The device is a monolithically integrated structure with a titanium bolometer detector located over a CMOS circuit that reads out the bolometer`s signals. By employing a metallic material like titanium and refining the CMOS readout circuit, it is possible to minimize 1/f noise. It is demonstrated that the use of low 1/f noise materials will help increase bias current and improve the S/N ratio. Since the fabrication process is silicon-process compatible, costs can be kept low.

• OSTI ID: 418065
• Journal Information: IEEE Transactions on Electron Devices, Vol. 43, Issue 11; Other Information: PBD: Nov 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
INFRARED RADIATION
RADIATION DETECTION
RADIATION DETECTORS
DESIGN
READOUT SYSTEMS
SIGNAL-TO-NOISE RATIO
PERFORMANCE