Growth of InGaN films and InGaN/AlGaN multiple quantum wells produced by molecular beam epitaxy
- Boston Univ., MA (United States)
In this paper the authors report on the growth, structure and properties of bulk InGaN films, GaN/InGaN/GaN double heterostructures and InGaN/AlGaN multi quantum well structures. The films were grown by Electron Cyclotron Resonance assisted Molecular Beam Epitaxy (ECR-MBE). The structure of the films was determined by X-ray diffraction which showed that for thick films phase separate InN is observed when the indium concentration is more than 30%. Such phase separation was accounted for by Stringfellow`s delta lattice parameter model which predicts the critical temperature for miscibility in the InN-GaN system to be about 2,400 K. Phase separation was not observed in heterostructures containing thin InGaN layers. The luminescence of thick InGaN films shows both transitions across the gap as well as transitions through defects. The latter dominates as the indium concentration increases. On the contrary, luminescence from MQW`s exhibits a narrow luminescence band at room temperature corresponding to the gap of the material.
- OSTI ID:
- 417644
- Report Number(s):
- CONF-960502-; ISBN 1-56677-163-3; TRN: IM9705%%17
- Resource Relation:
- Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: 1996; Related Information: Is Part Of III-V nitride materials and processes; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Dismukes, J.P. [ed.] [Univ. of Toledo, OH (United States)]; Pearton, S.J. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; PB: 241 p.; Electrochemical Society Proceedings Volume 96-11
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
INDIUM NITRIDES
MICROSTRUCTURE
OPTICAL PROPERTIES
MOLECULAR BEAM EPITAXY
GALLIUM NITRIDES
ALUMINIUM NITRIDES
ELECTRONIC EQUIPMENT
SEMICONDUCTOR MATERIALS
SUBSTRATES
SAPPHIRE
ELECTRON CYCLOTRON-RESONANCE
SCANNING ELECTRON MICROSCOPY
X-RAY DIFFRACTION
PHOTOLUMINESCENCE
ABSORPTIVITY
EXPERIMENTAL DATA
CRYSTAL GROWTH