The potential of ScN-GaN heterojunctions and alloys for wide bandgap semiconductor devices and displays
Abstract
The wide bandgap semiconductor GaN and its solid solution alloys with InN and AlN are of increasing interest for a number of optoelectronic applications. Current, the potential for combining GaN with ScN, a rock salt structure semiconductor with an optical bandgap of {approximately} 2.1 eV, has not been well recognized. To explore the idea, in this conceptual paper the authors first critically review the existing knowledge on ScN, including the controversies regarding stoichiometry/dopability and whether it is a semiconductor or a semimetal. They then propose three concepts for enhancing the potential of GaN in optoelectronic applications. The first is to combine GAN with ScN to form lattice matched GaN-ScN heterojunctions, the second is to form GaN-ScN solid solution alloys covering the range of energy gaps from 2.1--3.4 eV, and the third is to introduce rare earth luminescent centers into heterojunctions and alloys. 51 refs., 6 figs., 2 tabs.
- Authors:
-
- Exxon Research and Engineering Co., Annandale, NJ (United States)
- Boston Univ., MA (United States). Dept. of ECS Engineering
- Publication Date:
- OSTI Identifier:
- 417637
- Report Number(s):
- CONF-960502-
ISBN 1-56677-163-3; TRN: IM9705%%10
- Resource Type:
- Conference
- Resource Relation:
- Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: 1996; Related Information: Is Part Of III-V nitride materials and processes; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Dismukes, J.P. [ed.] [Univ. of Toledo, OH (United States)]; Pearton, S.J. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; PB: 241 p.; Electrochemical Society Proceedings Volume 96-11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SCANDIUM NITRIDES; SYNTHESIS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; GALLIUM NITRIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; ABSORPTIVITY; HALL EFFECT; PHOTOELECTRON SPECTROSCOPY; BAND THEORY; INTERFACES; SOLID SOLUTIONS; LATTICE PARAMETERS
Citation Formats
Dismukes, J P, and Moustakas, T D. The potential of ScN-GaN heterojunctions and alloys for wide bandgap semiconductor devices and displays. United States: N. p., 1996.
Web.
Dismukes, J P, & Moustakas, T D. The potential of ScN-GaN heterojunctions and alloys for wide bandgap semiconductor devices and displays. United States.
Dismukes, J P, and Moustakas, T D. 1996.
"The potential of ScN-GaN heterojunctions and alloys for wide bandgap semiconductor devices and displays". United States.
@article{osti_417637,
title = {The potential of ScN-GaN heterojunctions and alloys for wide bandgap semiconductor devices and displays},
author = {Dismukes, J P and Moustakas, T D},
abstractNote = {The wide bandgap semiconductor GaN and its solid solution alloys with InN and AlN are of increasing interest for a number of optoelectronic applications. Current, the potential for combining GaN with ScN, a rock salt structure semiconductor with an optical bandgap of {approximately} 2.1 eV, has not been well recognized. To explore the idea, in this conceptual paper the authors first critically review the existing knowledge on ScN, including the controversies regarding stoichiometry/dopability and whether it is a semiconductor or a semimetal. They then propose three concepts for enhancing the potential of GaN in optoelectronic applications. The first is to combine GAN with ScN to form lattice matched GaN-ScN heterojunctions, the second is to form GaN-ScN solid solution alloys covering the range of energy gaps from 2.1--3.4 eV, and the third is to introduce rare earth luminescent centers into heterojunctions and alloys. 51 refs., 6 figs., 2 tabs.},
doi = {},
url = {https://www.osti.gov/biblio/417637},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}