Transverse-junction-stripe lasers with a GaAs p--n homojunction
A new semiconductor laser structure named the transverse-junction-stripe (TJS) laser, in which the active region is a GaAs p-n homojunction sandwiched between GaAlAs layers, has been developed. It is possible to operate the laser continuously at room temperature below 100 mA. The minimum threshold current is 34 and 50 mA in pulsed and continuous operation, respectively. Relatively high efficiencies have been obtained, comparable to those of conventional double- heterostructure (DH) lasers. The transverse mode is fundamental in both directions and is almost independent of input current up to three times the threshold current. The longitudinal mode stays nearly single over a wide range of input current. The TE/TM power ratio exceeds 100 at 1.5 times the threshold current. (auth)
- Research Organization:
- Mitsubishi Electric Corp., Itami, Japan
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-33-007207
- OSTI ID:
- 4165740
- Journal Information:
- IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 427-431, Other Information: Orig. Receipt Date: 30-JUN-76
- Country of Publication:
- United States
- Language:
- English
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