New process technologies improve IGBT module efficiency

Conference · Sun Dec 31 00:00:00 EST 1995

OSTI ID:415491

Motto, E R; Donlon, J F ^[1]; Mori, Satoshi ^[2]; Iida, Takahiko ^[3]

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1. Powerex Inc., Youngwood, PA (United States)
2. Mitsubishi Electric, Fukuoka (Japan). Fukuoka Works
3. Okayama Univ. of Science (Japan). Dept. of Electronic Engineering

New process technologies are extending the application range of IGBT modules. A 1,400V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1,400V device has a square turn-off switching SOA making it suitable for 575/600 VAC inverter applications. A very low saturation voltage 250V IGBT has been developed using a trench gate structure. This new 250V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.

• OSTI ID: 415491
• Report Number(s): CONF-9510203-; TRN: IM9704%%122
• Resource Relation: Conference: IEEE/Industrial Application Society conference, Orlando, FL (United States), 8-12 Oct 1995; Other Information: PBD: 1995; Related Information: Is Part Of Conference record of the 1995 IEEE Industry Applications Society thirtieth IAS annual meeting. Volume 2; PB: 954 p.
• Country of Publication: United States
• Language: English

Related Subjects

33 ADVANCED PROPULSION SYSTEMS
INVERTERS
POWER SUPPLIES
ELECTRIC-POWERED VEHICLES
ELECTRIC CONTROLLERS
ENERGY EFFICIENCY