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Title: New process technologies improve IGBT module efficiency

Abstract

New process technologies are extending the application range of IGBT modules. A 1,400V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1,400V device has a square turn-off switching SOA making it suitable for 575/600 VAC inverter applications. A very low saturation voltage 250V IGBT has been developed using a trench gate structure. This new 250V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.

Authors:
;  [1];  [2];  [3]
  1. Powerex Inc., Youngwood, PA (United States)
  2. Mitsubishi Electric, Fukuoka (Japan). Fukuoka Works
  3. Okayama Univ. of Science (Japan). Dept. of Electronic Engineering
Publication Date:
OSTI Identifier:
415491
Report Number(s):
CONF-9510203-
Journal ID: ISSN 0197-2618; TRN: IM9704%%122
Resource Type:
Conference
Resource Relation:
Conference: IEEE/Industrial Application Society conference, Orlando, FL (United States), 8-12 Oct 1995; Other Information: PBD: 1995; Related Information: Is Part Of Conference record of the 1995 IEEE Industry Applications Society thirtieth IAS annual meeting. Volume 2; PB: 954 p.
Country of Publication:
United States
Language:
English
Subject:
33 ADVANCED PROPULSION SYSTEMS; INVERTERS; POWER SUPPLIES; ELECTRIC-POWERED VEHICLES; ELECTRIC CONTROLLERS; ENERGY EFFICIENCY

Citation Formats

Motto, E R, Donlon, J F, Mori, Satoshi, and Iida, Takahiko. New process technologies improve IGBT module efficiency. United States: N. p., 1995. Web.
Motto, E R, Donlon, J F, Mori, Satoshi, & Iida, Takahiko. New process technologies improve IGBT module efficiency. United States.
Motto, E R, Donlon, J F, Mori, Satoshi, and Iida, Takahiko. 1995. "New process technologies improve IGBT module efficiency". United States.
@article{osti_415491,
title = {New process technologies improve IGBT module efficiency},
author = {Motto, E R and Donlon, J F and Mori, Satoshi and Iida, Takahiko},
abstractNote = {New process technologies are extending the application range of IGBT modules. A 1,400V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1,400V device has a square turn-off switching SOA making it suitable for 575/600 VAC inverter applications. A very low saturation voltage 250V IGBT has been developed using a trench gate structure. This new 250V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.},
doi = {},
url = {https://www.osti.gov/biblio/415491}, journal = {},
issn = {0197-2618},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {12}
}

Conference:
Other availability
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